Pixel circuit, display device, and method of driving pixel circuit

ABSTRACT

A pixel circuit, display device, and method of driving a pixel circuit enabling source-follower output with no deterioration of luminance even with a change of the current-voltage characteristic of the light emitting element along with elapse, enabling a source-follower circuit of n-channel transistors, and able to use an n-channel transistor as an EL drive transistor while using current anode-cathode electrodes. The circuit includes a source of a TFT used as a drive transistor that is connected to an anode of a light emitting element, and a drain of the TFT is connected to a power source potential. A capacitor is connected between a gate and source of the TFT, and a source potential of the TFT is connected to a fixed potential through a TFT used as a switching transistor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. Ser. No.15/971,661 filed May 4, 2018, which a continuation application of U.S.Ser. No. 15/799,091 filed Oct. 31, 2017, which a continuationapplication of U.S. Ser. No. 15/581,518 filed Apr. 28, 2017, which is acontinuation application of U.S. Ser. No. 14/279,936 filed May 16, 2014,which is a continuation application of U.S. Ser. No. 13/960,229 filedAug. 6, 2013, which is a continuation application of U.S. Ser. No.13/416,243 filed Mar. 9, 2012, which is a continuation application ofU.S. Ser. No. 10/557,800 filed Nov. 16, 2006, the entire contents ofeach of which are incorporated herein by reference. U.S. Ser. No.10/557,800 is a National Stage of PCT/JP04/07304 filed May 21, 2004, andclaims priority to Japanese Application No. 2003-146758 filed May 23,2003.

TECHNICAL FIELD

The present invention relates to a pixel circuit having an electro-opticelement with a luminance controlled by a current value in an organic EL(electroluminescence) display etc., an image display device comprised ofsuch pixel circuits arrayed in a matrix, in particular a so-calledactive matrix type image display device controlled in value of currentflowing through the electro-optic elements by insulating gate type fieldeffect transistors provided inside the pixel circuits, and a method ofdriving a pixel circuit.

BACKGROUND ART

In an image display device, for example, a liquid crystal display, alarge number of pixels are arranged in a matrix and the light intensityis controlled for every pixel in accordance with the image informationto be displayed so as to display an image.

This same is true for an organic EL display etc. An organic EL displayis a so-called self-light emitting type display having a light emittingelement in each pixel circuit and has the advantages that theviewability of the image is higher in comparison with a liquid crystaldisplay, a backlight is unnecessary, the response speed is high, etc.

Further, it greatly differs from a liquid crystal display etc. in thepoint that the gradations of the color generation are obtained bycontrolling the luminance of each light emitting element by the value ofthe current flowing through the light emitting element, that is, eachlight emitting element is a current controlled type.

An organic EL display, in the same way as a liquid crystal display, maybe driven by a simple matrix and an active matrix system. While theformer has a simple structure, it has the problem that realization of alarge sized and high definition display is difficult. For this reason,much effort is being devoted to development of the active matrix systemof controlling the current flowing through the light emitting elementinside each pixel circuit by an active element provided inside the pixelcircuit, generally, a TFT (thin film transistor).

FIG. 1 is a block diagram of the configuration of a general organic ELdisplay device.

This display device 1 has, as shown in FIG. 1, a pixel array portion 2comprised of pixel circuits (PXLC) 2 a arranged in an m×n matrix, ahorizontal selector (HSEL) 3, a write scanner (WSCN) 4, data lines DTL1to DTLn selected by the horizontal selector 3 and supplied with a datasignal in accordance with the luminance information, and scanning linesWSL1 to WSLm selectively driven by the write scanner 4.

Note that the horizontal selector 3 and the write scanner 4 aresometimes formed around the pixels by MOSICs etc. when formed onpolycrystalline silicon.

FIG. 2 is a circuit diagram of an example of the configuration of apixel circuit 2 a of FIG. 1 (refer to for example U.S. Pat. No.5,684,365 and Patent Publication 2: Japanese Unexamined PatentPublication (Kokai) No. 8-234683).

The pixel circuit of FIG. 2 has the simplest circuit configuration amongthe large number of proposed circuits and is a so-called two-transistordrive type circuit.

The pixel circuit 2 a of FIG. 2 has a p-channel thin film FET(hereinafter, referred to as TFT) 11 and TFT 12, a capacitor C11, and alight emitting element constituted by an organic EL element (OLED) 13.Further, in FIG. 2, DTL indicates a data line, and WSL indicates ascanning line.

An organic EL element has a rectification property in many cases, sosometimes is referred to as an OLED (organic light emitting diode). Thesymbol of a diode is used as the light emitting element in FIG. 2 andthe other figures, but a rectification property is not always requiredfor an OLED in the following explanation.

In the pixel circuit 2 a of FIG. 2, a source of the TFT 11 is connectedto a power source potential VCC, and a cathode of the light emittingelement 13 is connected to a ground potential GND. The operation of thepixel circuit 2 a of FIG. 2 is as follows.

<Step ST1>:

When the scanning line WSL is made a selected state (low level here) anda write potential Vdata is supplied to the data line DTL, the TFT 12becomes conductive, the capacitor C11 is charged or discharged, and thegate potential of the TFT 11 becomes Vdata.

<Step ST2>:

When the scanning line WSL is made a non-selected state (high levelhere), the data line DTL and the TFT 11 are electrically separated, butthe gate potential of the TFT 11 is held stably by the capacitor C11.

<Step ST3>:

The current flowing through the TFT 11 and the light emitting element 13becomes a value in accordance with a gate-source voltage Vgs of the TFT11, while the light emitting element 13 is continuously emitting lightwith a luminance in accordance with the current value.

As in the above step ST1, the operation of selecting the scanning lineWSL and transmitting the luminance information given to the data line tothe inside of a pixel will be referred to as “writing” below.

As explained above, in the pixel circuit 2 a of FIG. 2, if once theVdata is written, the light emitting element 13 continues to emit lightwith a constant luminance in the period up to the next rewriteoperation.

As explained above, in the pixel circuit 2 a, by changing a gateapplication voltage of the drive transistor constituted by the TFT 11,the value of the current flowing through the EL element 13 iscontrolled.

At this time, the source of the p-channel drive transistor is connectedto the power source potential Vcc, so this TFT 11 is always operating ina saturated region. Accordingly, it becomes a constant current sourcehaving a value shown in the following equation 1.

Ids=½·μ(W/L)Cox(Vgs−|Vth|)²   (1)

Here, μ indicates the mobility of a carrier, Cox indicates a gatecapacitance per unit area, W indicates a gate width, L indicates a gatelength, and Vth indicates the threshold value of the TFT 11.

In a simple matrix type image display device, each light emittingelement emits light only at a selected instant, while in an activematrix, as explained above, each light emitting element continuesemitting light even after the end of the write operation. Therefore, itbecomes advantageous in especially a large sized and high definitiondisplay in the point that the peak luminance and peak current of eachlight emitting element can be lowered in comparison with a simplematrix.

FIG. 3 is a view of the change along with elapse of the current-voltage(I-V) characteristic of an organic EL element. In FIG. 3, the curveshown by the solid line indicates the characteristic in the initialstate, while the curve shown by the broken line indicates thecharacteristic after change with elapse.

In general, the I-V characteristic of an organic EL element ends updeteriorating along with elapse as shown in FIG. 3.

However, since the two-transistor drive system of FIG. 2 is a constantcurrent drive system, a constant current is continuously supplied to theorganic EL element as explained above. Even if the I-V characteristic ofthe organic EL element deteriorates, the luminance of the emitted lightwill not change along with elapse.

The pixel circuit 2 a of FIG. 2 is comprised of p-channel TFTs, but ifit were possible to configure it by n-channel TFTs, it would be possibleto use an amorphous silicon (a-Si) process in the past in thefabrication of the TFTs. This would enable a reduction in the cost ofTFT boards.

Next, consider a pixel circuit replacing the transistors with n-channelTFTs.

FIG. 4 is a circuit diagram of a pixel circuit replacing the p-channelTFTs of the circuit of FIG. 2 with n-channel TFTs.

The pixel circuit 2 b of FIG. 4 has an n-channel TFT 21 and TFT 22, acapacitor C21, and a light emitting element constituted by an organic ELelement (OLED) 23. Further, in FIG. 4, DTL indicates a data line, andWSL indicates a scanning line.

In the pixel circuit 2 b, the drain side of the drive transistorconstituted by the TFT 21 is connected to the power source potentialVcc, and the source is connected to the anode of the organic EL lightemitting element 23, whereby a source-follower circuit is formed.

FIG. 5 is a view of the operating point of a drive transistorconstituted by the TFT 21 and an EL element 23 in the initial state. InFIG. 5, the abscissa indicates the drain-source voltage Vds of the TFT21, while the ordinate indicates the drain-source current Ids.

As shown in FIG. 5, the source voltage is determined by the operatingpoint of the drive transistor constituted by the TFT 21 and the EL lightemitting element 23. The voltage differs in value depending on the gatevoltage.

This TFT 21 is driven in the saturated region, so a current Ids of thevalue of the above equation 1 is supplied for the Vgs for the sourcevoltage of the operating point.

However, here too, similarly, the I-V characteristic of the organic ELelement ends up deteriorating along with elapse. As shown in FIG. 6, theoperating point ends up fluctuating due to this deteriorating along withelapse. The source voltage fluctuates even if supplying the same gatevoltage.

Due to this, the gate-source voltage Vgs of the drive transistorconstituted by the TFT 21 ends up changing and the value of the currentflowing fluctuates. The value of the current flowing through the organicEL element 23 simultaneously changes, so if the I-V characteristic ofthe organic EL element 23 deteriorates, the luminance of the emittedlight will end up changing along with elapse in the source-followercircuit of FIG. 4.

Further, as shown in FIG. 7, a circuit configuration where the source ofthe drive transistor constituted by the n-channel TFT 21 is connected tothe ground potential GND, the drain is connected to the cathode of theorganic EL light emitting element 23, and the anode of the organic ELlight emitting element 23 is connected to the power source potential Vccmay be considered.

With this system, in the same way as when driven by the p-channel TFT ofFIG. 2, the potential of the source is fixed, the drive transistorconstituted by the TFT 21 operates as a constant current source, and achange in the luminance due to deterioration of the I-V characteristicof the organic EL element can be prevented.

With this system, however, the drive transistor has to be connected tothe cathode side of the organic EL light emitting element. This cathodicconnection requires development of new anode-cathode electrodes. This isconsidered extremely difficult with the current level of technology.

From the above, in the past systems, no organic EL light emittingelement using a n-channel transistor free of change in luminance hasbeen developed.

DISCLOSURE OF THE INVENTION

An object of the present invention is to provide a pixel circuit,display device, and method of driving a pixel circuit enablingsource-follower output with no deterioration of luminance even with achange of the current-voltage characteristic of the light emittingelement along with elapse, enabling a source-follower circuit ofn-channel transistors, and able to use an n-channel transistor as an ELelement transistor while using current anode-cathode electrodes.

To achieve the above object, according to a first aspect of the presentinvention, there is provided a pixel circuit for driving anelectro-optic element with a luminance changing according to a flowingcurrent, comprising a data line through which a data signal inaccordance with luminance information is supplied; a first control line;first and second nodes; first and second reference potentials; a drivetransistor forming a current supply line between the first terminal andthe second terminal and controlling a current flowing through thecurrent supply line in accordance with the potential of a controlterminal connected to the second node; a pixel capacitance elementconnected between the first node and the second node; a first switchconnected between the data line and either of a first terminal or secondterminal of the pixel capacitance element and controlled in conductionby the first control line; and a first circuit for making a potential ofthe first node change to a fixed potential while the electro-opticelement is not emitting light; the current supply line of the drivetransistor, the first node, and the electro-optic element beingconnected in series between the first reference potential and secondreference potential.

Preferably, the circuit further comprises a second control line; thedrive transistor is a field effect transistor with a source connected tothe first node, a drain connected to the first reference potential orsecond reference potential, and a gate connected to the second node; andthe first circuit includes a second switch connected between the firstnode and fixed potential and is controlled in conduction by the secondcontrol line.

Preferably, when the electro-optic element is driven, as a first stage,the first switch is held in a non-conductive state by the first controlline, the second switch is held in a conductive state by the secondcontrol line, and the first node is connected to a fixed potential; as asecond stage, the first switch is held in a conductive state by thefirst control line, data to be propagated over the data line is writtenin the pixel capacitance element, then the first switch is held in anon-conductive state; and as a third stage, the second switch is held ina non-conductive state by the second control line.

Preferably, the circuit further comprises a second control line; thedrive transistor is a field effect transistor with a drain connected tothe first reference potential or second reference potential and a gateconnected to the second node; and the first circuit includes a secondswitch connected between a source of the field effect transistor and anelectro-optic element and is controlled in conduction by the secondcontrol line.

Preferably, when the electro-optic element is driven, as a first stage,the first switch is held in a non-conductive state by the first controlline, and the second switch is held in a non-conductive state by thesecond control line; as a second stage, the first switch is held in aconductive state by the first control line, data to be propagated overthe data line is written in the pixel capacitance element, then thefirst switch is held in a non-conductive state; and as a third stage,the second switch is held in a conductive state by the second controlline.

Preferably, the circuit further comprises a second control line; thedrive transistor is a field effect transistor with a source connected tothe first node, a drain connected to the first reference potential orsecond reference potential, and a gate connected to the second node; andthe first circuit includes a second switch connected between the firstnode and the electro-optic element and is controlled in conduction bythe second control line.

Preferably, when the electro-optic element is driven, as a first stage,the first switch is held in a non-conductive state by the first controlline, and the second switch is held in a non-conductive state by thesecond control line; as a second stage, the first switch is held in aconductive state by the first control line, data to be propagated overthe data line is written in the pixel capacitance element, then thefirst switch is held in a non-conductive state; and as a third stage,the second switch is held in a conductive state by the second controlline.

Preferably, the circuit further has a second circuit making the firstnode be held at a fixed potential when the first switch is held in aconductive state and writes data propagated through the data line.

Preferably, the circuit further comprises second and third control linesand a voltage supply; the drive transistor is a field effect transistorwith a drain connected to the first reference potential or secondreference potential and a gate connected to the second node; the firstcircuit includes a second switch connected between a source of the fieldeffect transistor and the electro-optic element and is controlled inconduction by the second control line; and the second circuit includes athird switch connected between the first node and the voltage source andis controlled in conduction by the third control line.

Preferably, when the electro-optic element is driven, as a first stage,the first switch is held in a non-conductive state by the first controlline, the second switch is held in a non-conductive state by the secondcontrol line, and the third switch is held in a non-conductive state bythe third control line; as a second stage, the first switch is held in aconductive state by the first control line, the third switch is held ina conductive state by the third control line, the first node is held ata predetermined potential, and, in that state, data to be propagatedover the data line is written in the pixel capacitance element, then thefirst switch is held in a non-conductive state by the first controlline; and as a third stage, the third switch is held in a non-conductivestate by the third control line and the second switch is held in aconductive state by the second control line.

Preferably, the circuit further has second and third control lines and avoltage source; the drive transistor is a field effect transistor with asource connected to the first node, a drain connected to the firstreference potential or second reference potential, and a gate connectedto the second node; the first circuit includes a second switch connectedbetween the first node and the electro-optic element and controlled inconduction by the second control line; and the second circuit includes athird switch connected between the first node and the voltage source andis controlled in conduction by the third control line.

Preferably, when the electro-optic element is driven, as a first stage,the first switch is held in a non-conductive state by the first controlline, the second switch is held in a non-conductive state by the secondcontrol line, and the third switch is held in a non-conductive state bythe third control line; as a second stage, the first switch is held in aconductive state by the first control line, the third switch is held ina conductive state by the third control line, the first node is held ata predetermined potential, and, in that state, data to be propagatedover the data line is written in the pixel capacitance element, then thefirst switch is held in a non-conductive state by the first controlline; and as a third stage, the third switch is held in a non-conductivestate by the third control line and the second switch is held in aconductive state by the second control line.

Preferably, the circuit further has a second circuit making the secondnode be held at a fixed potential when the first switch is held in aconductive state and writes data propagated through the data line.

Further, the fixed potential is the first reference potential or secondreference potential.

Preferably, the circuit further comprises second, third, and fourthcontrol lines; the drive transistor is a field effect transistor with asource connected to the first node, a drain connected to the firstreference potential or second reference potential, and a gate connectedto the second node;

the first circuit includes a second switch connected between the firstnode and the electro-optic element and is controlled in conduction bythe second control line and a third switch connected between a source ofthe field effect transistor and the first node and is controlled inconduction by the third control line; and the second circuit includes afourth switch connected between the first node and the fixed potentialand is controlled in conduction by the fourth control line.

Further, preferably when the electro-optic element is driven, as a firststage, the first switch is held in a non-conductive state by the firstcontrol line, the second switch is held in a non-conductive state by thesecond control line, the third switch is held in a non-conductive stateby the third control line, and the fourth switch is held in anon-conductive state by the fourth control line; as a second stage, thefirst switch is held in a conductive state by the first control line,the fourth switch is held in a conductive state by the fourth controlline, the second node is held at a fixed potential, and, in that state,data to be propagated over the data line is written in the pixelcapacitance element, then the first switch is held in a non-conductivestate by the first control line, and the fourth switch is held at anon-conductive state by the fourth control line; and as a third stage,the second switch is held in a conductive state by the second controlline and the third switch is held in a conductive state by the thirdcontrol line.

According to a second aspect of the present invention, there is provideda display device comprising a plurality of pixel circuits arranged in amatrix; a data line arranged for each column of the matrix array ofpixel circuits and through which a data signal in accordance withluminance information is supplied; a first control line arranged foreach row of the matrix array of pixel circuits; and first and secondreference potentials; each pixel circuit further having an electro-opticelement with a luminance changing according to a flowing current, firstand second nodes, a drive transistor forming a current supply linebetween a first terminal and a second terminal and controlling a currentflowing through the current supply line in accordance with the potentialof a control terminal connected to the second node, a pixel capacitanceelement connected between the first node and the second node, a firstswitch connected between the data line and the second node andcontrolled in conduction by the first control line, and a first circuitfor making a potential of the first node change to a fixed potentialwhile the electro-optic element is not emitting light, the currentsupply line of the drive transistor, the first node, and theelectro-optic element being connected in series between the firstreference potential and second reference potential.

According to a third aspect of the present invention, there is provideda method of driving a pixel circuit having an electro-optic element witha luminance changing according to a flowing current; a data line throughwhich a data signal in accordance with luminance information issupplied; first and second nodes; first and second reference potentials;a field effect transistor with a drain connected to the first referencepotential or second reference potential, a source connected to the firstnode, and a gate connected to the second node; a pixel capacitanceelement connected between the first node and the second node; a firstswitch connected between the data line and either of a first terminal ora second terminal of the pixel capacitance element; and a first circuitfor making a potential of the first node change to a fixed potential;the current supply line of the drive transistor, the first node, and theelectro-optic element being connected in series between the firstreference potential and second reference potential, comprising steps ofmaking a potential of the first node change to a fixed potential by thefirst circuit in the state with the first switch held at anon-conductive state, holding the first switch at a conductive state,writing data propagated over the data line in the pixel capacitanceelement, then holding the first switch in the non-conductive, andstopping the operation for making a potential of the first node of saidfirst circuit change to a fixed potential.

According to the present invention, since for example the sourceelectrode of a drive transistor is connected to a fixed potentialthrough a switch and there is a pixel capacitor between the gate andsource of the drive transistor, the change in luminance due to thechange in the I-V characteristic of a light emitting element along withelapse is corrected.

When the drive transistor is an n-channel transistor, by making thefixed potential a ground potential, the potential applied to the lightemitting element is made the ground potential so as to create anon-emitting period of the light emitting element.

Further, by adjusting the off period of the second switch connecting thesource electrode and ground potential, the emitting and non-emittingperiods of the light emitting element are adjusted for duty driving.

Further, by making the fixed potential close to the ground potential ora potential lower than that or by raising the gate voltage,deterioration of the image quality due to fluctuation in the thresholdvoltage Vth of the switching transistor connected to the fixed potentialis suppressed.

Further, when the drive transistor is a p-channel transistor, by makingthe fixed potential the potential of the power source connected to thecathode electrode of the light emitting element, the potential appliedto the light emitting element is made the power source potential so asto create a non-emitting period of the EL element.

Further, by making the characteristic of the drive transistor ann-channel type, a source-follower circuit becomes possible and anodicconnection becomes possible.

Further, making all of the drive transistors n-channel transistorsbecomes possible, introduction of a general amorphous silicon processbecomes possible, and reduction of the cost becomes possible.

Further, since the second switching transistor is laid out between thelight emitting element and the drive transistor, current is not suppliedto the drive transistor in the non-emitting period and therefore powerconsumption of the panel is suppressed.

Further, by using a potential of the cathode side of the light emittingelement as the ground potential, for example, the second referencepotential, there is no need to provide a GND line at the TFT side insidethe panel.

Further, by being able to delete the GND lines of the TFT boards in thepanel, layout in the pixels and layout of the peripheral circuits becomeeasy.

Further, by being able to delete the GND lines of the TFT boards in thepanel, there is no overlap between the power source potential (firstreference potential) and ground potential (second reference potential)of the peripheral circuits, the Vcc lines can be laid out with a lowerresistance, and a high uniformity can be achieved.

Further, by connecting for example a pixel capacitance element to thesource of a drive transistor and boosting one side of the capacitor tothe power source while not emitting light, there is no longer a need fora GND line at the TFT side at the inside of the panel.

Further, by turning the fourth switch at the power source line side onwhen writing in a signal line so as to lower the impedance, the couplingeffect on pixel writing is corrected in a short time and an image of ahigh uniformity is obtained.

Further, by making the potential of the power source line the same asthe Vcc potential, it is possible to reduce the panel lines.

Further, according to the present invention, by connecting the gateelectrode of the drive transistor to a fixed potential through a switchand providing a pixel capacitor between the gate and source of the drivetransistor, change of the luminance due to deterioration of the I-Vcharacteristic of the light emitting element along with elapse iscorrected.

For example, when the drive transistor is an n-channel, by making thefixed potential the fixed potential to which the drain electrode of thedrive transistor is connected, the fixed potential is made only thepower source potential in the pixel.

Further, by raising the gate voltages of the switching transistorsconnected to the gate side and source side of the drive transistor ormaking the transistors larger in size, deterioration of the imagequality due to variation in the threshold values of the switchingtransistors is suppressed. Further, when the drive transistor is ap-channel, by making the fixed potential the fixed potential to whichthe drain electrode of the driven is connected, the fixed potential ismade only GND in the pixel.

Further, by raising the gate voltages of the switching transistorsconnected to the gate side and source side of the drive transistor ormaking the transistors larger in size, deterioration of the imagequality due to variation in the threshold values of the switchingtransistors is suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of the configuration of a general organic ELdisplay device.

FIG. 2 is a circuit diagram of an example of the configuration of apixel circuit of FIG. 1.

FIG. 3 is a graph of the change along with elapse of the current-voltage(I-V) characteristic of an organic EL device.

FIG. 4 is a circuit diagram of a pixel circuit in which p-channel TFTsof the circuit of FIG. 2 are replaced by re-channel TFTs.

FIG. 5 is a graph showing the operating point of a drive transistorconstituted by a TFT and an EL light emitting element in the initialstate.

FIG. 6 is a graph showing the operating point of a drive transistorconstituted by a TFT and an EL light emitting element after change alongwith elapse.

FIG. 7 is a circuit diagram of a pixel circuit connecting a source of adrive transistor constituted by an re-channel TFT to a ground potential.

FIG. 8 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a first embodiment.

FIG. 9 is a circuit diagram of a specific configuration of a pixelcircuit according to the first embodiment in the organic EL displaydevice of FIG. 1.

FIG. 10A is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 9.

FIG. 10B is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 9.

FIG. 10C is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 9.

FIG. 10D is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 9.

FIG. 10E is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 9.

FIG. 10F is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 9.

FIG. 11A is a timing chart for explaining the operation of the circuitof FIG. 9.

FIG. 11B is a timing chart for explaining the operation of the circuitof FIG. 9.

FIG. 11C is another timing chart for explaining the operation of thecircuit of FIG. 9.

FIG. 11D is another timing chart for explaining the operation of thecircuit of FIG. 9.

FIG. 11E is another timing chart for explaining the operation of thecircuit of FIG. 9.

FIG. 11F is another timing chart for explaining the operation of thecircuit of FIG. 9.

FIG. 12 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a second embodiment.

FIG. 13 is a circuit diagram of a specific configuration of a pixelcircuit according to the second embodiment in the organic EL displaydevice of FIG. 12.

FIG. 14A is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 13.

FIG. 14B is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 13.

FIG. 14C is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 13.

FIG. 14D is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 13.

FIG. 14E is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 13.

FIG. 15A is a timing chart for explaining the operation of the circuitof FIG. 13.

FIG. 15B is another timing chart for explaining the operation of thecircuit of FIG. 13.

FIG. 15C is another timing chart for explaining the operation of thecircuit of FIG. 13.

FIG. 15D is another timing chart for explaining the operation of thecircuit of FIG. 13.

FIG. 15E is another timing chart for explaining the operation of thecircuit of FIG. 13.

FIG. 15F is another timing chart for explaining the operation of thecircuit of FIG. 13.

FIG. 16 is a circuit diagram of another example of the configuration ofa pixel circuit according to the second embodiment.

FIG. 17 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a third embodiment.

FIG. 18 is a circuit diagram of a specific configuration of a pixelcircuit according to the third embodiment in the organic EL displaydevice of FIG. 17.

FIG. 19A is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 18.

FIG. 19B is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 18.

FIG. 19C is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 18.

FIG. 19D is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 18.

FIG. 19E is a view of another equivalent circuit for explaining theoperation of the circuit of FIG. 18.

FIG. 20A is a timing chart for explaining the operation of the circuitof FIG. 18.

FIG. 20B is another timing chart for explaining the operation of thecircuit of FIG. 18.

FIG. 20C is another timing chart for explaining the operation of thecircuit of FIG. 18.

FIG. 20D is another timing chart for explaining the operation of thecircuit of FIG. 18.

FIG. 20E is another timing chart for explaining the operation of thecircuit of FIG. 18.

FIG. 20F is another timing chart for explaining the operation of thecircuit of FIG. 18.

FIGS. 21 is a circuit diagram of another example of the configuration ofa pixel circuit according to the third embodiment.

FIG. 22 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a fourth embodiment.

FIG. 23 is a circuit diagram of a specific configuration of a pixelcircuit according to the fourth embodiment in the organic EL displaydevice of FIG. 22.

FIG. 24A is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 23.

FIG. 24B is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 23.

FIG. 24C is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 23.

FIG. 24D is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 23.

FIG. 24E is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 23.

FIG. 25A is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25B is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25C is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25D is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25E is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25F is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25G is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 25H is a timing chart for explaining the operation of the circuitof FIG. 23.

FIG. 26 is a circuit diagram of a pixel circuit having a fixed voltageline as the power source potential VCC.

FIG. 27 is a circuit diagram of a pixel circuit having a fixed voltageline as the ground potential GND.

FIG. 28 is a circuit diagram of another example of the configuration ofa pixel circuit according to the fourth embodiment.

FIG. 29 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a fifth embodiment.

FIG. 30 is a circuit diagram of a specific configuration of a pixelcircuit according to the fifth embodiment in the organic EL displaydevice of FIG. 29.

FIG. 31A is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 30.

FIG. 31B is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 30.

FIG. 31C is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 30.

FIG. 31D is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 30.

FIG. 31E is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 30.

FIG. 32A is a timing chart for explaining the operation of the circuitof FIG. 30.

FIG. 32B is another timing chart for explaining the operation of thecircuit of FIG. 30.

FIG. 32C is another timing chart for explaining the operation of thecircuit of FIG. 30.

FIG. 32D is a timing chart for explaining the operation of the circuitof FIG. 30.

FIG. 32E is another timing chart for explaining the operation of thecircuit of FIG. 30.

FIG. 32F is another timing chart for explaining the operation of thecircuit of FIG. 30.

FIG. 32G is another timing chart for explaining the operation of thecircuit of FIG. 30.

FIG. 32H is another timing chart for explaining the operation of thecircuit of FIG. 30.

FIG. 33 is a circuit diagram of a pixel circuit having a fixed voltageline as the power source potential VCC.

FIG. 34 is a circuit diagram of a pixel circuit having a fixed voltageline as the ground potential GND.

FIG. 35 is a circuit diagram of another example of the configuration ofa pixel circuit according to the fifth embodiment.

FIG. 36 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a sixth embodiment.

FIG. 37 is a circuit diagram of a specific configuration of a pixelcircuit according to the sixth embodiment in the organic EL displaydevice of FIG. 36.

FIG. 38A is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 37.

FIG. 38B is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 37.

FIG. 38C is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 37.

FIG. 38D is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 37.

FIG. 38E is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 37.

FIG. 38F is another view of an equivalent circuit for explaining theoperation of the circuit of FIG. 37.

FIG. 39 is a view of an equivalent circuit for explaining the operationof the circuit of FIG. 37.

FIG. 40A is a timing chart for explaining the operation of the circuitof FIG. 37.

FIG. 40B is another timing chart for explaining the operation of thecircuit of FIG. 37.

FIG. 40C is another timing chart for explaining the operation of thecircuit of FIG. 37.

FIG. 40D is another timing chart for explaining the operation of thecircuit of FIG. 37.

FIG. 40E is another timing chart for explaining the operation of thecircuit of FIG. 37.

FIG. 40F is another timing chart for explaining the operation of thecircuit of FIG. 37.

FIG. 40G is another timing chart for explaining the operation of thecircuit of FIG. 37.

FIG. 40H is another timing chart for explaining the operation of thecircuit of FIG. 37.

BEST MODE FOR WORKING THE INVENTION Below, preferred embodiments of thepresent invention will be described with reference to the accompanyingdrawings.

<First Embodiment>

FIG. 8 is a block diagram of the configuration of an organic EL displaydevice employing pixel circuits according to the first embodiment.

FIG. 9 is a circuit diagram of the concrete configuration of a pixelcircuit according to the first embodiment in the organic EL displaydevice of FIG. 8.

This display device 100 has, as shown in FIG. 8 and FIG. 9, a pixelarray portion 102 having pixel circuits (PXLC) 101 arranged in an m×nmatrix, a horizontal selector (HSEL) 103, a write scanner (WSCN) 104, adrive scanner (DSCN) 105, data lines DTL101 to DTL10 n selected by thehorizontal selector 103 and supplied with a data signal in accordancewith the luminance information, scanning lines WSL101 to WSL10 mselectively driven by the write scanner 104, and drive lines DSL101 toDSL10 m selectively driven by the drive scanner 105.

Note that while the pixel circuits 101 are arranged in an m×n matrix inthe pixel array portion 102, FIG. 9 shows an example wherein the pixelcircuits are arranged in a 2 (=m)×3 (=n) matrix for the simplificationof the drawing. Further, in FIG. 9, the concrete configuration of onepixel circuit is shown for simplification of the drawing.

The pixel circuit 101 according to the first embodiment has, as shown inFIG. 9, an n-channel TFT 111 to TFT 113, a capacitor C111, a lightemitting element 114 made of an organic EL element (OLED), and nodesND111 and ND112.

Further, in FIG. 9, DTL101 indicates a data line, WSL101 indicates ascanning line, and DSL101 indicates a drive line.

Among these components, TFT 111 configures the field effect transistoraccording to the present invention, TFT 112 configures the first switch,TFT 113 configures the second switch, and the capacitor C111 configuresthe pixel capacitance element according to the present invention.

Further, the scanning line WSL101 corresponds to the first control lineaccording to the present invention, while the drive line DSL101corresponds to the second control line. Further, the supply line (powersource potential) of the power source voltage Vcc corresponds to thefirst reference potential, while the ground potential GND corresponds tothe second reference potential.

In the pixel circuit 101, a light emitting element (OLED) 114 isconnected between a source of the TFT 111 and the second referencepotential (in this present embodiment, the ground potential GND).Specifically, the anode of the light emitting element 114 is connectedto the source of the TFT 111, while the cathode side is connected to theground potential GND. The connection point of the anode of the lightemitting element 114 and the source of the TFT 111 constitutes a nodeND111.

The source of the TFT 111 is connected to a drain of the TFT 113 and afirst electrode of the capacitor C111, while the gate of the TFT 111 isconnected to a node ND112.

The source of the TFT 113 is connected to a fixed potential (in thepresent embodiment, a ground potential GND), while the gate of the TFT113 is connected to the drive line DSL101. Further, a second electrodeof the capacitor C111 is connected to the node ND112.

A source and a drain of the TFT 112 as first switch are connected to thedata line DTL101 and node ND112. Further, a gate of the TFT 112 isconnected to the scanning line WSL101.

In this way, the pixel circuit 101 according to the present embodimentis configured with a capacitor C111 connected between the gate andsource of the TFT 111 as the drive transistor and with a sourcepotential of the TFT 111 connected to a fixed potential through the TFT113 as the switching transistor.

Next, the operation of the above configuration will be explainedfocusing on the operation of a pixel circuit with reference to FIGS. 10Ato 10F and FIGS. 11A to 11F.

Note that FIG. 11A shows a scanning signal ws[101] applied to the firstrow scanning line WSL101 of the pixel array, FIG. 11B shows a scanningsignal ws[102] applied to the second row scanning line WSL102 of thepixel array, FIG. 11C shows a drive signal ds[101] applied to the firstrow drive line DSL101 of the pixel array, FIG. 11D shows a drive signalds[101] applied to the second row drive line DSL102 of the pixel array,FIG. 11E shows a gate potential Vg of the TFT 111, and FIG. 11F shows asource potential Vs of the TFT 111.

First, at the time of the ordinary emitting state of the EL lightemitting element 114, as shown in FIGS. 11A to 11D, the scanning signalsws[101], ws[102], . . . to the scanning lines WSL101, WSL102, . . . areselectively set to the low level by the write scanner 104, and the drivesignals ds[101], ds[102], . . . to the drive lines DSL101, DSL102, . . .are selectively set to the low level by the drive scanner 105.

As a result, in the pixel circuits 101, as shown in FIG. 10A, the TFT112 and TFT 113 are held in the off state.

Next, in the non-emitting period of the EL element 114, as shown inFIGS. 11A to 11D, the scanning signals ws[101], ws[102], . . . to thescanning lines WSL101, WSL102, . . . are held at the low level by thewrite scanner 104, and the drive signals ds[101], ds[102], . . . to thedrive lines DSL101, DSL102, . . . are selectively set to the high levelby the drive scanner 105.

As a result, in the pixel circuits 101, as shown in FIG. 10B, the TFT112 is held in the off state and the TFT 113 is turned off.

At this time, current flows through the TFT 113 and, as shown in FIG.11F, the source potential Vs of the TFT 111 falls to the groundpotential GND. Therefore, the voltage applied to the EL light emittingelement 114 also becomes 0V and the EL light emitting element 114becomes non-emitting in state.

Next, in the non-emitting period of the EL light emitting element 114,as shown in FIGS. 11A to 11D, the drive signals ds[101], ds[102], . . .to the drive lines DSL101, DSL102, . . . are held at the high level bythe drive scanner 105, and the scanning signals ws[101], ws[102], . . .to the scanning lines WSL101, WSL102, . . . are selectively set to thehigh level by the write scanner 104.

As a result, in the pixel circuits 101, as shown in FIG. 10C, the TFT113 is held in the on state and the TFT 112 is turned on. Due to this,the horizontal selector 103 writes the input signal (Vin) propagated tothe data line DTL101 into the capacitor C111 as the pixel capacitor.

At this time, as shown in FIG. 11F, the source potential Vs of the TFT111 as the drive transistor is at the ground potential level (GNDlevel), so, as shown in FIGS. 11E and 11F, the potential differencebetween the gate and source of the TFT 111 becomes equal to the voltageVin of the input signal.

After this, in the non-emitting period of the EL light emitting element114, as shown in FIGS. 11A to 11D, the drive signals ds[101], ds[102], .. . to the drive lines DSL101, DSL102, . . . are held at the high levelby the drive scanner 105 and the scanning signals ws[101], ws[102], . .. to the scanning lines WSL101, WSL102, . . . are selectively set to thelow level by the write scanner 104.

As a result, in the pixel circuit 101, as shown in FIG. 10D, the TFT 112is turned off and the write operation of the input signal to thecapacitor C111 as the pixel capacitor ends.

After this, as shown in FIGS. 11A to 11D, the scanning signals ws[101],ws[102], . . . to the scanning lines WSL101, WSL102, . . . are held atthe low level by the write scanner 104 and the drive signals ds[101],ds[102], . . . to the drive lines DSL101, DSL102, . . . are selectivelyset to the low level by the drive scanner 104.

As a result, in the pixel circuit 101, as shown in FIG. 10E, the TFT 113is turned off.

By turning the TFT 113 off, as shown in FIG. 11F, the source potentialVs of the TFT 111 as the drive transistor rises and current also flowsto the EL light emitting element 114.

The source potential Vs of the TFT 111 fluctuates, but despite this,since there is a capacitor between the gate and source of the TFT 111,as shown in FIGS. 11E and 11F, the gate-source potential is constantlyheld at Vin.

At this time, the TFT 111 as the drive transistor drives in thesaturated region, so the current Ids flowing through the TFT 111 becomesthe value shown in the above equation 1. This value is determined by thegate source potential Vin of the TFT 111. This current Ids similarlyflows to the EL light emitting element 114, whereby the EL lightemitting element 114 emits light.

The equivalent circuit of the EL light emitting element 114 becomes asshown in FIG. 10F, so at this time the potential of the node ND111 risesto the gate potential by which the current Ids flows through the ELlight emitting element 114.

Along with this rise in potential, the potential of the node ND112 alsosimilarly rises through the capacitor 111 (pixel capacitor Cs). Due tothis, as explained above, the gate-source potential of the TFT 111 isheld at Vin.

Here, consider the problems in the past source-follower system in thecircuit of the present invention. In this circuit as well, the EL lightemitting element deteriorates in its I-V characteristic along with theincrease in the emitting period. Therefore, even if the drive transistorsends the same current, the potential applied to the EL light emittingelement changes and the potential of the node ND111 falls.

However, in this circuit, the potential of the node ND111 falls whilethe gate-source potential of the drive transistor is held constant, sothe current flowing through the drive transistor (TFT 111) does notchange. Accordingly, the current flowing through the EL light emittingelement also does not change. Even if the I-V characteristic of the ELlight emitting element deteriorates, a current corresponding to theinput voltage Vin constantly flows. Therefore, the past problem can besolved.

As explained above, according to the present first embodiment, thesource of the TFT 111 as the drive transistor is connected to the anodeof the light emitting element 114, the drain is connected to the powersource potential Vcc, a capacitor C111 is connected between the gate andsource of the TFT 111, and the source potential of the TFT 111 isconnected to a fixed potential through the TFT 113 as the switchingtransistor, so the following effects can be obtained.

Source-follower output with no deterioration in luminance even with achange in the I-V characteristic of an EL light emitting element alongwith elapse becomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of anEL light emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, there is the advantage that areduction of the cost of TFT boards becomes possible.

<Second Embodiment>

FIG. 12 is a block diagram of the configuration of an organic EL displaydevice employing pixel circuits according to a second embodiment.

FIG. 13 is a circuit diagram of the concrete configuration of a pixelcircuit according to the second embodiment in the organic EL displaydevice of FIG. 12.

The display device 200, as shown in FIG. 12 and FIG. 13, has a pixelarray portion 202 having pixel circuits (PXLC) 201 arranged in an m×nmatrix, a horizontal selector (HSEL) 203, a write scanner (WSCN) 204, adrive scanner (DSCN) 205, data lines DTL201 to DTL20 n selected by thehorizontal selector 203 and supplied with a data signal in accordancewith the luminance information, scanning lines WSL201 to WSL20 mselectively driven by the write scanner 204, and drive lines DSL201 toDSL20 m selectively driven by the drive scanner 205.

Note that while the pixel circuits 201 are arranged in an m×n matrix inthe pixel array portion 202, FIG. 12 shows an example wherein the pixelcircuits are arranged in a 2 (=m)×3 (=n) matrix for the simplificationof the drawing.

Further, in FIG. 13 as well, the concrete configuration of one pixelcircuit is shown for simplification of the drawing.

Each pixel circuit 201 according to the second embodiment has, as shownin FIG. 13, an n-channel TFT 211 to TFT 213, a capacitor C211, a lightemitting element 214 made of an organic EL element (OLED), and nodesND211 and ND212.

Further, in FIG. 13, DTL201 indicates a data line, WSL201 indicates ascanning line, and DSL201 indicates a drive line.

Among these components, the TFT 211 configures the field effecttransistor according to the present invention, the TFT 212 configuresthe first switch, the TFT 213 configures the second switch, and thecapacitor C211 configures the pixel capacitance element according to thepresent invention.

Further, the scanning line WSL 201 corresponds to the first control lineaccording to the present invention, while the drive line DSL201corresponds to the second control line.

Further, the supply line of the power source voltage Vcc (power sourcepotential) corresponds to the first reference potential, while theground potential GND corresponds to the reference potential.

In each pixel circuit 201, a source and a drain of the TFT 213 areconnected between a source of the TFT 211 and an anode of the lightemitting element 214, a drain of the TFT 211 is connected to the powersource potential Vcc, and a cathode of the light emitting element 214 isconnected to the ground potential GND. That is, the TFT 211 as the drivetransistor, the TFT 213 as the switching transistor, and the lightemitting element 214 are connected in series between the power sourcepotential Vcc and the ground potential GND. Further, the connectionpoint of the anode of the light emitting element 214 and the source ofthe TFT 213 constitutes a node ND211.

A gate of the TFT 211 is connected to the node ND212. Further, thecapacitor C211 as a pixel capacitor Cs connected between the nodes ND211and ND212, that is, between the gate of the TFT 211 and the anode of thelight emitting element 214. A first electrode of the capacitor C211 isconnected to the node ND211, while a second electrode is connected tothe node ND212.

A gate of the TFT 213 is connected to the drive line DSL201. Further, asource and a drain of the TFT 212 as the first switch are connected tothe data line DTL201 and the node ND212. Further, a gate of the TFT 212is connected to the scanning line WSL201.

In this way, the pixel circuit 201 according to the present embodimentis configured with the source of the TFT 211 as the drive transistor andthe anode of the light emitting element 214 connected by the TFT 213 asthe switching transistor, while a capacitor C211 connected between thegate of the TFT 211 and the anode of the light emitting element 214.

Next, the operation of the above configuration will be explainedfocusing on the operation of a pixel circuit with reference to FIGS. 14Ato 14E and FIGS. 15A to 15F.

Note that FIG. 15A shows a scanning signal ws[201] applied to the firstrow scanning line WSL201 of the pixel array, FIG. 15B shows a scanningsignal ws[202] applied to the second row scanning line WSL202 of thepixel array, FIG. 15C shows a drive signal ds[201] applied to the firstrow drive line DSL201 of the pixel array, FIG. 15D shows a drive signalds[202] applied to the second row drive line DSL202 of the pixel array,FIG. 15E shows a gate potential Vg of the TFT 211, and FIG. 15F shows ananode side potential of the TFT 211, that is, the potential VND211 ofthe node ND211.

First, at the ordinary emitting state of the EL light emitting element214, as shown in FIGS. 15A to 15D, the scanning signals ws[201],ws[202], . . . to the scanning lines WSL201, WSL202, . . . areselectively set to the low level by the write scanner 204, and the drivesignals ds[201], ds[202], . . . to the drive lines DSL201, DSL202, . . .are selectively set to the high level by the drive scanner 205.

As a result, in the pixel circuit 201, as shown in FIG. 14A, the TFT 212is held in the off state and the TFT 213 is held in the on state.

At this time, the current Ids flows to the TFT 211 as the drivetransistor and the EL light emitting element 214.

Next, in the non-emitting period of the EL light emitting element 214,as shown in FIGS. 15A to 15D, the scanning signals ws[201], ws[202], . .. to the scanning lines WSL201, WSL202, . . . are held at the low levelby the write scanner 204, and the drive signals ds[201], ds[202], . . .to the drive lines DSL201, DSL202, . . . are selectively set to the lowlevel by the drive scanner 205.

As a result, in the pixel circuit 201, as shown in FIG. 14B, the TFT 212is held in the off state and the TFT 213 is turned off.

At this time, the potential held at the EL light emitting element 214falls since the source of supply disappears. The potential falls to thethreshold voltage Vth of the EL light emitting element 214. However,since current also flows to the EL light emitting element 214, if thenon-emitting period continues, the potential will fall to GND.

On the other hand, the TFT 211 as the drive transistor is held in the onstate since the gate potential is high. This boosting is performed in ashort period. After boosting to the Vcc, no current is supplied to theTFT 211.

That is, in the pixel circuit 201 of the second embodiment, it ispossible to operate without the supply of current in the pixel circuitduring the non-emitting period and therefore possible to suppress thepower consumption of the panel.

Next, in the non-emitting period of the EL light emitting element 214,as shown in FIGS. 15A to 15D, the drive signals ds[201], ds[202], . . .to the drive lines DSL201, DSL202, . . . are held at the low level bythe drive scanner 205, and the scanning signals ws[201], ws[202], . . .to the scanning lines WSL201, WSL202, . . . are selectively set to thehigh level by the write scanner 204.

As a result, in the pixel circuit 201, as shown in FIG. 14C, the TFT 213is held in the off state and the TFT 212 is turned on. Due to this, theinput signal (Vin) propagated to the data line DTL201 by the horizontalselector 203 is written into the capacitor C211 as the pixel capacitorCs.

At this time, as shown in FIG. 15F, since the anode side potential Va ofthe TFT 213 as the switching transistor, that is, the potential VND211of the node ND211, is at the ground potential level (GND level), thecapacitor C211 as the pixel capacitor Cs is held at a potential equal tothe voltage Vin of the input signal.

After this, in the non-emitting period of the EL light emitting element214, as shown in FIGS. 15A to 15D, the drive signals ds[201], ds[202], .. . to the drive lines DSL201, DSL202, . . . are held at the low levelby the drive scanner 205, and the scanning signals ws[201], ws[202], . .. to the scanning lines WSL201, WSL202, . . . are selectively set to thelow level by the write scanner 204.

As a result, in the pixel circuit 201, as shown in FIG. 14D, the TFT 212is turned off and the write operation of the input signal to thecapacitor C211 as the pixel capacitor ends.

After this, as shown in FIGS. 15A to 15D, the scanning signals ws[201],ws[202], . . . to the scanning lines WSL201, WSL202, . . . are held atthe low level by the write scanner 204, and the drive signals ds[201],ds[202], . . . to the drive lines DSL201, DSL202, . . . are selectivelyset to the high level by the drive scanner 205.

As a result, in the pixel circuit 201, as shown in FIG. 14E, the TFT 213is turned on.

By turning the TFT 213 on, current flows to the EL light emittingelement 214 and the source potential of the TFT 211 falls. The sourcepotential of the TFT 211 as the drive transistor fluctuates, but despitethis, since there is a capacitor between the gate of the TFT 211 and theanode of the light emitting element 214, the gate-source potential isheld at Vin. At this time, the TFT 211 as the drive transistor is drivenin the saturated region, so the current Ids flowing through the TFT 211becomes the value shown in the above equation 1. This is the gate-sourcevoltage Vgs of the drive transistor.

Here, the TFT 213 operates in the nonsaturated region, so this is viewedas a simple resistance value. Accordingly, the gate-source voltage ofthe TFT 211 is Vin minus the value of the voltage drop due to the TFT211. That is, the current flowing through the TFT 211 can be said to bedetermined by the Vin.

Due to the above, even if the EL light emitting element 214 deterioratesin its I-V characteristic along with the increase in the emittingperiod, in the pixel circuit 201 of the second embodiment, the potentialof the node ND211 falls while the potential between the gate and sourceof the TFT 211 as the drive transistor by is held constant, so thecurrent flowing through the TFT 211 does not change.

Accordingly, the current flowing through the EL light emitting element214 also does not change. Even if the I-V characteristic of the EL lightemitting element 214 deteriorates, the current corresponding to theinput voltage Vin constantly flows and therefore the past problem can besolved.

In addition, by raising the on voltage of the gate of the TFT 213, it ispossible to suppress variation in the resistance value due to variationin the threshold value Vth of the TFT 213.

Note that, in FIG. 13, the potential of the cathode electrode of thelight emitting element 214 is made the ground potential GND, but thismay be made any other potential as well.

Further, as shown in FIG. 16, the transistors of the pixel circuits neednot be n-channel transistors. p-channel TFTs 221 to 223 may also be usedto form each pixel circuit. In this case, the power source is connectedto the anode side of the EL light emitting element 224, while the TFT221 as the drive transistor is connected to the cathode side.

Further, the TFT 212 and TFT 213 as the switching transistors may alsobe transistors of different polarities from the TFT 211 as the drivetransistor.

Here, the pixel circuit 201 according to the second embodiment and thepixel circuit 101 according to the first embodiment explained above willbe compared.

The basic difference between the pixel circuit 201 according to thesecond embodiment and the pixel circuit 101 according to the firstembodiment lies in the difference in the position of connection of theTFT 213 and TFT 113 as the switching transistors.

In general, the I-V characteristic of an organic EL element ends updeteriorating along with elapse. However, in the pixel circuit 101according to the first embodiment, the potential difference Vs betweenthe gate and source of the TFT 111 is held constant, so the currentflowing through the TFT 111 is constant, therefore even if the I-Vcharacteristic of the organic EL element deteriorates, the luminance isheld.

In the pixel circuit 101 according to the first embodiment, when the TFT112 is off and the TFT 113 is on, the source potential Vs of the drivetransistor TFT 111 becomes the ground potential and the organic ELelement 114 does not emit light and enters a non-emitting period.Simultaneously, the first electrode (one side) of the pixel capacitoralso becomes the ground potential GND. However, even in the non-emittingperiod, the gate-source voltage continues to be held and current flowsin the pixel circuit 101 from the power source (Vcc) to the GND.

In general, an organic EL element has an emitting period and anon-emitting period. The luminance of a panel is determined by theproduct of the intensity of the emission and the emitting period.Usually, the shorter the emitting period, the better the moving picturecharacteristics become, so it is preferable to use the panel in a shortemitting period. To obtain the same luminance as with when shorteningthe emitting period, it is necessary to raise the intensity of theemission of the organic EL element and necessary to run a greatercurrent through the drive transistor.

Here, the pixel circuit 101 according to the first embodiment will beconsidered further.

In the pixel circuit 101 according to the first embodiment, as explainedabove, current flows even during the non-emitting period. Therefore, ifshortening the emitting period and raising the amount of current run,current continuously flows even during the non-emitting period, so thecurrent consumption increases.

Further, in the pixel circuit 101 according to the first embodiment,power source potential VVCC and ground potential GND lines are necessaryin the panel. Therefore, it is necessary to lay two types of linesinside the panel at the TFT side. The Vcc and GND have to be laid by alow resistance to prevent a voltage drop. Accordingly, if laying twotypes of lines, the layout area of the lines has to be increased. Forthis reason, if the pitch between pixels becomes smaller along with thehigher definition of panels, laying of the transistors etc. is liable tobecome difficult. Simultaneously, the regions where the Vcc lines andGND lines overlap in the panel are liable to increase and theimprovement of the yield is liable to be kept down.

As opposed to this, according to the pixel circuit 201 according to thesecond embodiment, the effects of the above first embodiment can beobtained of course and also the effects of reduction of the consumedcurrent and lines and improvement of the yield can be obtained.

According to the second embodiment, source-follower output with nodeterioration in luminance even with a change in the I-V characteristicof an EL light emitting element along with elapse becomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of anEL light emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, a reduction of the cost of TFTboards becomes possible.

Further, according to the second embodiment, it is possible to slash thenumber of GND lines at the TFT side and layout of the surrounding linesand layout of the pixels become easier.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board, and possible to improve the yield.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board so as to lay the Vcc lines at a low resistance, andpossible to obtain an image quality of a high uniformity.

<Third Embodiment>

FIG. 17 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a third embodiment.

FIG. 18 is a circuit diagram of the concrete configuration of a pixelcircuit according to the third embodiment in the organic EL displaydevice of FIG. 17.

The display device 200A according to the third embodiment differs fromthe display device 200 according to the second embodiment in theposition of connection of the capacitor C211 as the pixel capacitor Csin the pixel circuit.

Specifically, in the pixel circuit 201 according to the secondembodiment, the capacitor C211 is connected between the gate of the TFT211 as the drive transistor and the anode side of the EL light emittingelement 214.

As opposed to this, in the pixel circuit 201A according to the thirdembodiment, the capacitor C211 is connected between the gate and sourceof the TFT 211 as the drive transistor. Specifically, a first electrodeof the capacitor C211 is connected to the connection point (node ND211A)of the source of the TFT 211 and the TFT 213 as the switching transistorand a second electrode is connected to the node ND212.

The rest of the configuration is similar to that of the secondembodiment explained above.

Next, the operation of the above configuration will be explainedfocusing on the operation of a pixel circuit with reference to FIGS. 19Ato 19E and FIGS. 20A to 20F.

First, at the ordinary emitting state of the EL light emitting element214, as shown in FIGS. 20A to 20D, the scanning signals ws[201],ws[202], . . . to the scanning lines WSL201, WSL202, . . . areselectively set to the low level by the write scanner 204, and the drivesignals ds[201], ds[202], . . . to the drive lines DSL201, DSL202, . . .are selectively set to the high level by the drive scanner 205.

As a result, in the pixel circuit 201A, as shown in FIG. 19A, the TFT212 is held in the off state and the TFT 213 is held in the on state.

At this time, the current Ids flows to the TFT 211 as the drivetransistor and the EL light emitting element 214.

Next, in the non-emitting period of the EL light emitting element 214,as shown in FIGS. 20A to 20D, the scanning signals ws[201], ws[202], . .. to the scanning lines

WSL201, WSL202, . . . are held at the low level by the write scanner204, and the drive signals ds[201], ds[202], . . . to the drive linesDSL201, DSL202, . . . are selectively set to the low level by the drivescanner 205.

As a result, in the pixel circuit 201A, as shown in FIG. 19B, the TFT212 is held in the off state and the TFT 213 is turned off.

At this time, the potential held at the EL light emitting element 214falls since the source of supply disappears. The potential falls to thethreshold voltage Vth of the EL light emitting element 214. However,since off current also flows to the EL light emitting element 214, ifthe non-emitting period continues, the potential will fall to GND.

On the other hand, the TFT 211 as the drive transistor is held in the onstate since the gate potential is high. As shown in FIG. 20F, the sourcepotential Vs of the TFT 211 is boosted to the power source voltage Vcc.This boosting is performed in a short period. After boosting to the Vcc,no current is supplied to the TFT 211.

That is, in the pixel circuit 201A of the third embodiment, it ispossible to operate without the supply of current in the pixel circuitduring the non-emitting period and therefore possible to suppress thepower consumption of the panel.

Next, in the non-emitting period of the EL light emitting element 214,as shown in FIGS. 20A to 20D, the drive signals ds[201], ds[202], . . .to the drive lines DSL201, DSL202, . . . are held at the low level bythe drive scanner 205, and the scanning signals ws[201], ws[202], . . .to the scanning lines WSL201, WSL202, . . . are selectively set to thehigh level by the write scanner 204.

As a result, in the pixel circuit 201A, as shown in FIG. 19C, the TFT213 is held in the off state and the TFT 212 is turned on. Due to this,the input signal (Vin) propagated to the data line DTL201 by thehorizontal selector 203 is written into the capacitor C211 as the pixelcapacitor Cs.

At this time, as shown in FIG. 20F, since the source Vs of the TFT 213as the switching transistor is the power source potential Vcc, thecapacitor C211 as the pixel capacitor Cs is held at a potential equal to(Vin−Vcc) with respect to the voltage Vin of the input signal.

After this, in the non-emitting period of the EL light emitting element214, as shown in FIGS. 20A to 20D, the drive signals ds[201], ds[202], .. . to the drive lines DSL201, DSL202, . . . are held at the low levelby the drive scanner 205, and the scanning signals ws[201], ws[202], . .. to the scanning lines WSL201, WSL202, . . . are selectively set to thelow level by the write scanner 204.

As a result, in the pixel circuit 201A, as shown in FIG. 19D, the TFT212 is turned off and the write operation of the input signal to thecapacitor C211 as the pixel capacitor ends.

After this, as shown in FIGS. 20A to 20D, the scanning signals ws[201],ws[202], . . . to the scanning lines WSL201, WSL202, . . . are held atthe low level by the write scanner 204, and the drive signals ds[201],ds[202], . . . to the drive lines DSL201, DSL202, . . . are selectivelyset to the high level by the drive scanner 205.

As a result, in the pixel circuit 201A, as shown in FIG. 19E, the TFT213 is turned on.

By turning the TFT 213 on, current flows to the EL light emittingelement 214 and the source potential of the TFT 211 falls. The sourcepotential of the TFT 211 as the drive transistor fluctuates, but despitethis, since there is a capacitor between the gate and source of the TFT211, the other transistors etc. are not connected, so the gate-sourcevoltage of the TFT 211 is constantly held at (Vin−Vcc). At this time,the TFT 211 as the drive transistor is driven in the saturated region,so the current Ids flowing through the TFT 211 becomes the value shownin the above equation 1. This is the gate-source voltage Vgs of thedrive transistor, that is, (Vin−Vcc).

That is, the current flowing through the TFT 211 can be said to bedetermined by the Vin.

Due to the above, even if the EL light emitting element 214 deterioratesin its I-V characteristic along with the increase in the emittingperiod, in the pixel circuit 201A of the third embodiment, the potentialof the node ND211A falls while the potential between the gate and sourceof the TFT 211 as the drive transistor is held constant, so the currentflowing through the TFT 211 does not change.

Accordingly, the current flowing through the EL light emitting element214 also does not change. Even if the I-V characteristic of the EL lightemitting element 214 deteriorates, the current corresponding to theinput voltage Vin constantly flows and therefore the past problem can besolved.

In addition, since there is no transistor etc. other than the pixelcapacitor Cs between the gate and source of the TFT 211, variation inthe threshold value Vth will not cause any change of the gate-sourcevoltage Vgs of the TFT 211 as the drive transistor like in the pastsystem.

Note that, in FIG. 18, the potential of the cathode electrode of thelight emitting element 214 is made the ground potential GND, but thismay be made any other potential as well. Rather, making this thenegative power source enables the potential of the Vcc to be lowered andenables the potential of the input signal voltage to be lowered. Due tothis, design without burdening the external IC becomes possible.

Further, since no GND lines are required, the number of input pins tothe panel can be slashed and pixel layout also becomes easier. Inaddition, since there are no longer intersecting parts of the Vcc andGND lines in the panel, the yield can also be easily improved.

Further, as shown in FIG. 21, the transistors of the pixel circuits neednot be n-channel transistors. p-channel TFTs 231 to 233 may also be usedto form each pixel circuit. In this case, the power source is connectedto the anode side of the EL element 234, while the TFT 231 as the drivetransistor is connected to the cathode side.

Further, the TFT 212 and TFT 213 as the switching transistors may alsobe transistors of different polarities from the TFT 211 as the drivetransistor.

According to the third embodiment, source-follower output with nodeterioration in luminance even with a change in the I-V characteristicof an EL light emitting element along with elapse becomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of anEL light emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, a reduction of the cost of TFTboards becomes possible.

Further, according to the third embodiment, it is possible to slash thenumber of GND lines at the TFT side and layout of the surrounding linesand layout of the pixels become easier.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board, and possible to improve the yield.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board so as to lay the Vcc lines at a low resistance, andpossible to obtain an image quality of a high uniformity.

<Fourth Embodiment>

FIG. 22 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a fourth embodiment.

FIG. 23 is a circuit diagram of the concrete configuration of a pixelcircuit according to the fourth embodiment in the organic EL displaydevice of FIG. 22.

The display device 300, as shown in FIG. 22 and FIG. 23, has a pixelarray portion 302 having pixel circuits (PXLC) 301 arranged in an m×nmatrix, a horizontal selector (HSEL) 303, a first write scanner (WSCN1)304, a second write scanner (WSCN2) 305, a drive scanner (DSCN) 36, aconstant voltage source (CVS) 307, data lines DTL301 to DTL30 n selectedby the horizontal selector 303 and supplied with a data signal inaccordance with the luminance information, scanning lines WSL301 toWSL30 m selectively driven by the write scanner 304, scanning linesWSL311 to WSL31 m selectively driven by the write scanner 305, and drivelines DSL301 to DSL30 m selectively driven by the drive scanner 306.

Note that while the pixel circuits 301 are arranged in an m×n matrix inthe pixel array portion 302, FIG. 22 shows an example wherein the pixelcircuits are arranged in a 2 (=m)×3 (=n) matrix for the simplificationof the drawing.

Further, in FIG. 23 as well, the concrete configuration of one pixelcircuit is shown for simplification of the drawing.

Each pixel circuit 301 according to the fourth embodiment has, as shownin FIG. 23, an n-channel TFT 311 to TFT 314, a capacitor C311, a lightemitting element 315 made of an organic EL element (OLED), and nodesND311 and ND312.

Further, in FIG. 23, DTL301 indicates a data line, WSL301 and WSL311indicate scanning lines, and DSL301 indicates a drive line.

Among these components, the TFT 311 configures the field effecttransistor according to the present invention, the TFT 312 configuresthe first switch, the TFT 313 configures the second switch, the TFT 314configures the third switch, and the capacitor C311 configures the pixelcapacitance element according to the present invention.

Further, the scanning line WSL301 corresponds to the first control lineaccording to the present invention, the drive line DSL301 corresponds tothe second control line, and the scanning line WSL311 corresponds to thethird control line.

Further, the supply line of the power source voltage Vcc (power sourcepotential) corresponds to the first reference potential, while theground potential GND corresponds to the reference potential.

In each pixel circuit 301, a source and a drain of the TFT 313 areconnected between a source of the TFT 311 and an anode of the lightemitting element 315, a drain of the TFT 311 is connected to the powersource potential Vcc, and a cathode of the light emitting element 315 isconnected to the ground potential GND. That is, the TFT 311 as the drivetransistor, the TFT 313 as the switching transistor, and the lightemitting element 315 are connected in series between the power sourcepotential Vcc and the ground potential GND. Further, the connectionpoint of the anode of the light emitting element 315 and the TFT 313constitutes a node ND311.

A gate of the TFT 311 is connected to the node ND312. Further, thecapacitor C311 as a pixel capacitor Cs is connected between the nodesND311 and ND312, that is, between the gate of the TFT 311 and the nodeND311 (anode of the light emitting element 315). A first electrode ofthe capacitor C311 is connected to the node ND311, while a secondelectrode is connected to the node ND312.

A gate of the TFT 313 is connected to the drive line DSL301. Further, asource and a drain of the TFT 312 as the first switch are connected tothe data line DTL301 and the node ND312. Further, a gate of the TFT 312is connected to the scanning line WSL301.

Further, a source and a drain of the TFT 314 are connected between thenode ND311 and the constant voltage source 307. A gate of the TFT 314 isconnected to the scanning line WSL311.

In this way, the pixel circuit 301 according to the present embodimentis configured with the source of the TFT 311 as the drive transistor andthe anode of the light emitting element 315 connected by the TFT 313 asthe switching transistor, a capacitor C311 connected between the gate ofthe TFT 311 and the node ND311 (anode of the light emitting element315), and a node ND311 is connected through the TFT 314 to the constantvoltage source 307 (fixed voltage line).

Next, the operation of the above configuration will be explainedfocusing on the operation of a pixel circuit with reference to FIGS. 24Ato 24E and FIGS. 25A to 25H.

Note that FIG. 25A shows a scanning signal ws[301] applied to the firstrow scanning line WSL301 of the pixel array, FIG. 25B shows a scanningsignal ws[302] applied to the second row scanning line WSL302 of thepixel array, FIG. 25C shows a scanning signal ws[311] applied to thefirst row scanning line WSL311 of the pixel array, FIG. 25D shows ascanning signal ws[312] applied to the second row scanning line WSL312of the pixel array, FIG. 25E shows a drive signal ds[301] applied to thefirst row drive line DSL301 of the pixel array, FIG. 25F shows a drivesignal ds[302] applied to the second row drive line DSL302 of the pixelarray, FIG. 25G shows a gate potential Vg of the TFT 311, and FIG. 25Hshows an anode side potential of the TFT 311, that is, the potentialVND311 of the node ND311.

First, at the ordinary emitting state of the EL light emitting element315, as shown in FIGS. 25A to 25F, the scanning signals ws[301],ws[302], . . . to the scanning lines WSL301, WSL302, . . . areselectively set to the low level by the write scanner 304, the scanningsignals ws[311], ws[312], . . . to the scanning lines WSL311, WSL312, .. . are selectively set to the low level by the write scanner 305, andthe drive signals ds[301], ds[302], . . . to the drive lines DSL301,DSL302, . . . are selectively set to the high level by the drive scanner306.

As a result, in the pixel circuit 301, as shown in FIG. 24A, the TFTs312 and 314 are held in the off state and the TFT 313 is held in the onstate.

At this time, since the TFT 311 as the drive transistor is driven in thesaturated region, the current Ids flows to the TFT 311 and the ELelement 315 with respect to the gate-source voltage Vgs.

Next, in the non-emitting period of the EL light emitting element 315,as shown in FIGS. 25A to 25F, the scanning signals ws[301], ws[302], . .. to the scanning lines WSL301, WSL302, . . . are held at the low levelby the write scanner 304, the scanning signals ws[311], ws[312], . . .to the scanning lines WSL311, WSL312, . . . are held at the low level bythe write scanner 305, and the drive signals ds[301], ds[302], . . . tothe drive lines DSL301, DSL302, . . . are selectively set to the lowlevel by the drive scanner 306.

As a result, in the pixel circuit 301, as shown in FIG. 24B, the TFT 312and the TFT 314 are held in the off state and the TFT 313 is turned off.

At this time, the potential held at the EL light emitting element 315falls since the source of supply disappears. The potential falls to thethreshold voltage Vth of the EL light emitting element 315. However,since off current also flows to the EL light emitting element 315, ifthe non-emitting period continues, the potential will fall to GND.

On the other hand, the TFT 311 as the drive transistor is held in the onstate since the gate potential is high. As shown in FIG. 25G, the sourcepotential of the TFT 311 is boosted to the power source voltage Vcc.This boosting is performed in a short period. After boosting to the Vcc,no current is supplied to the TFT 311.

That is, in the pixel circuit 301 of the fourth embodiment, it ispossible to operate without the supply of current in the pixel circuitduring the non-emitting period and therefore possible to suppress thepower consumption of the panel.

Next, in the non-emitting period of the EL light emitting element 315,as shown in FIGS. 25A to 25F, the drive signals ds[301], ds[302], . . .to the drive lines DSL301, DSL302, . . . are held at the low level bythe drive scanner 306, the scanning signals ws[301], ws[302], . . . tothe scanning lines WSL301, WSL302, . . . are selectively set to the highlevel by the write scanner 304, and the scanning signals ws[311],ws[312], . . . to the scanning lines WSL311, WSL312, . . . areselectively set to the high level by the write scanner 305.

As a result, in the pixel circuit 301, as shown in FIG. 24C, the TFT 312and TFT 314 are turned on while the TFT 313 is held in the off state.Due to this, the input signal (Vin) propagated to the data line DTL301by the horizontal selector 303 is written into the capacitor C311 as thepixel capacitor Cs.

When writing this signal line voltage, it is important that the TFT 314be turned on. If there were no TFT 314, if the TFT 312 were turned onand the video signal were written in the pixel capacor Cs, couplingwould enter the source potential Vs of the TFT 311. As opposed to this,if turning on the TFT 314 connecting the node ND311 to the constantvoltage source 307, it will be connected to the low impedance line, sothe voltage of the line would be written into the source potential side(node ND311) of the TFT 311.

At this time, if making the potential of the line Vo, the sourcepotential (potential of the node ND311) of the TFT 311 as the drivetransistor becomes Vo, so a potential equal to (Vin−Vo) is held withrespect to the voltage Vin of the input signal at the pixel capacitorCs.

After this, in the non-emitting period of the EL light emitting element315, as shown in FIGS. 25A to 25F, the drive signals ds[301], ds[302], .. . to the drive lines DSL301, DSL302, . . . are held at the low levelby the drive scanner 306, the scanning signals ws[311], ws[312], . . .to the scanning lines WSL311, WSL312, . . . are held at the high levelby the write scanner 306, and the scanning signals ws[301], ws[302], . .. to the scanning lines WSL301, WSL302, . . . are selectively set to thelow level by the write scanner 304.

As a result, in the pixel circuit 301, as shown in FIG. 24D, the TFT 312is turned off and the write operation of the input signal to thecapacitor C311 as the pixel capacitor ends.

At this time, the source potential of the TFT 311 (potential of nodeND311) has to hold the low impedance, so the TFT 314 is left on.

After this, as shown in FIGS. 25A to 25F, while the drive signalsws[301], ws[302], . . . to the scanning lines WSL301, WSL302, . . . areheld at the low level by the write scanner 304, the scanning signalsws[311], ws[312], . . . to the scanning lines WSL311, WSL312, . . . areset to the low level by the write scanner 305, then the drive signalsds[301], ds[302], . . . to the drive lines DSL301, DSL302, . . . areselectively set to the high level by the drive scanner 306.

As a result, in the pixel circuit 301, as shown in FIG. 24E, the TFT 314is turned off and the TFT 313 becomes on.

By turning the TFT 313 on, current flows to the EL light emittingelement 315 and the source potential of the TFT 311 falls. The sourcepotential of the TFT 311 as the drive transistor fluctuates, but despitethis, since there is a capacitor between the gate and source of the TFT311, the gate-source voltage of the TFT 311 is constantly held at(Vin−Vo).

At this time, the TFT 311 as the drive transistor is driven in thesaturated region, so the current Ids flowing through the TFT 311 becomesthe value shown in the above equation 1. This is the gate-source voltageVgs of the drive transistor, that is, (Vin−Vo).

That is, the current flowing through the TFT 311 can be said to bedetermined by the Vin.

In this way, by turning the TFT 314 on during a signal write period tomake the source of the TFT 311 low in impedance, it is possible to makethe source side of the TFT 311 of the pixel capacitor a fixed potentialat all times, there is no need to consider deterioration of imagequality due to coupling at the time of a signal line write operation,and it is possible to write the signal line voltage in a short time.Further, it is possible to increase the pixel capacity to take measuresagainst leak characteristics.

Due to the above, even if the EL light emitting element 315 deterioratesin its I-V characteristic along with the increase in the emittingperiod, in the pixel circuit 301 of the fourth embodiment, the potentialof the node ND311 falls while the potential between the gate and sourceof the TFT 311 as the drive transistor is held constant, so the currentflowing through the TFT 311 does not change.

Accordingly, the current flowing through the EL light emitting element315 also does not change. Even if the I-V characteristic of the EL lightemitting element 315 deteriorates, the current corresponding to theinput voltage Vin constantly flows and therefore the past problem can besolved.

In addition, since there is no transistor etc. other than the pixelcapacitor Cs between the gate and source of the TFT 311, variation inthe threshold value Vth will not cause any change of the gate-sourcevoltage Vgs of the TFT 311 as the drive transistor like in the pastsystem.

Note that the potential of the line connected to the TFT 314 (constantvoltage source) is not limited, but as shown in FIG. 26, if making thepotential the same as Vcc, slashing the number of signal lines becomespossible. Due to this, the layout of the panel lines and pixel partsbecomes easy. Further, the number of pads for panel input becomespossible.

On the other hand, the gate-source voltage Vgs of the TFT 311 as thedrive transistor, as explained above, is determined by Vin−Vo.Accordingly, for example as shown in FIG. 27, if setting Vo to a lowpotential such as the ground potential GND, the input signal voltage Vincan be prepared by the low potential near the GND level and boosting ofthe signal of the nearby ICs is not required. Further, it is possible toreduce the on voltage of the TFT 313 as the switching transistor andpossible to eliminate the burden on the external ICs in design.

Further, in FIG. 23, the potential of the cathode electrode of the lightemitting element 315 is made the ground potential GND, but this may bemade any other potential as well. Rather, making this the negative powersource enables the potential of the Vcc to be lowered and enables thepotential of the input signal voltage to be lowered. Due to this, designwithout burdening the external IC becomes possible.

Further, as shown in FIG. 28, the transistors of the pixel circuits neednot be n-channel transistors. p-channel TFTs 321 to 324 may also be usedto form each pixel circuit. In this case, the power source potential Vccis connected to the anode side of the EL light emitting element 324,while the TFT 321 as the drive transistor is connected to the cathodeside.

Further, the TFT 312, TFT 313, and TFT 314 as the switching transistorsmay also be transistors of different polarities from the TFT 311 as thedrive transistor.

According to the fourth embodiment, source-follower output with nodeterioration in luminance even with a change in the I-V characteristicof an EL element along with elapse becomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of anEL light emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, a reduction of the cost of TFTboards becomes possible.

Further, according to the fourth embodiment, it is possible to write thesignal line voltage in a short time even with for example a black signaland possible to obtain an image quality with a high uniformity.Simultaneously, it is possible to increase the signal line capacity andsuppress leakage characteristics.

Further, it is possible to slash the number of GND lines at the TFT sideand layout of the surrounding lines and layout of the pixels becomeeasier.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board, and possible to improve the yield.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board so as to lay the Vcc lines at a low resistance, andpossible to obtain an image quality of a high uniformity.

Still further, it is possible to make the input signal voltage near theGND and possible to lighten the load on the external drive system.

<Fifth Embodiment>

FIG. 29 is a block diagram of the configuration of an organic EL displaydevice employing a pixel circuit according to a fifth embodiment.

FIG. 30 is a circuit diagram of the concrete configuration of a pixelcircuit according to the fifth embodiment in the organic EL displaydevice of FIG. 29.

The display device 300A according to the fifth embodiment differs fromthe display device 300 according to the fourth embodiment in theposition of connection of the capacitor C311 as the pixel capacitor Csin the pixel circuit.

Specifically, in the pixel circuit 301 according to the fourthembodiment, the capacitor C311 is connected between the gate of the TFT311 as the drive transistor and the anode side of the EL light emittingelement 315.

As opposed to this, in the pixel circuit 301A according to the fifthembodiment, the capacitor C311 is connected between the gate and sourceof the TFT 311 as the drive transistor. Specifically, a first electrodeof the capacitor C311 is connected to the connection point (node ND311A)of the source of the TFT 311 and the TFT 313 as the switching transistorand a second electrode is connected to the node ND312.

The rest of the configuration is similar to that of the fourthembodiment explained above.

Next, the operation of the above configuration will be explainedfocusing on the operation of a pixel circuit with reference to FIGS. 31Ato 31E and FIGS. 32A to 32H.

First, at the ordinary emitting state of the EL light emitting element315, as shown in FIGS. 32A to 32F, the scanning signals ws[301],ws[302], . . . to the scanning lines WSL301, WSL302, . . . areselectively set to the low level by the write scanner 304, the scanningsignals ws[311], ws[312], . . . to the scanning lines WSL311, WSL312, .. . are selectively set to the low level by the write scanner 305, andthe drive signals ds[301], ds[302], . . . to the drive lines DSL301,DSL302, . . . are selectively set to the high level by the drive scanner306.

As a result, in the pixel circuit 301, as shown in FIG. 31A, the TFTs312 and 314 are held in the off state and the TFT 313 is held in the onstate.

At this time, the TFT 311 as the drive transistor is driven in thesaturated region, so the current Ids flows to the TFT 311 and the ELlight emitting element 315 with respect to the gate-source voltage Vgs.

Next, in the non-emitting period of the EL light emitting element 315,as shown in FIGS. 32A to 32F, the scanning signals ws[301], ws[302], . .. to the scanning lines WSL301, WSL302, . . . are selectively held atthe low level by the write scanner 304, the scanning signals ws[311],ws[312], . . . to the scanning lines WSL311, WSL312, . . . areselectively held at the low level by the write scanner 305, and thedrive signals ds[301], ds[302], . . . to the drive lines DSL301, DSL302,. . . are selectively set to the low level by the drive scanner 306.

As a result, in the pixel circuit 301, as shown in FIG.

31B, the TFT 312 and TFT 314 are held in the off state and the TFT 313is turned off.

At this time, the potential held at the EL light emitting element 315falls since the source of supply disappears and the EL light emittingelement 315 does not emit light. The potential falls to the thresholdvoltage Vth of the EL light emitting element 315. However, since offcurrent also flows to the EL light emitting element 315, if thenon-emitting period continues, the potential will fall to GND.

On the other hand, along with the voltage drop of the anode side of theEL light emitting element 315, the gate potential of the TFT 311 as thedrive transistor falls through the capacitor C311. In parallel withthis, current flows to the TFT 311 and the source potential rises.

Due to this, the TFT 311 becomes cut off and no current flows to the TFT311.

That is, in the pixel circuit 301A of the fifth embodiment, it ispossible to operate without the supply of current in the pixel circuitduring the non-emitting period and therefore possible to suppress thepower consumption of the panel.

Next, in the non-emitting period of the EL light emitting element 315,as shown in FIGS. 32A to 32F, while the drive signals ds[301], ds[302],. . . to the drive lines DSL301, DSL302, . . . are held at the low levelby the drive scanner 306, the scanning signals ws[301], ws[302], . . .to the scanning lines WSL301, WSL302, . . . are selectively set to thehigh level by the write scanner 304, and the scanning signals ws[311],ws[312], . . . to the scanning lines WSL311, WSL312, . . . areselectively set to the high level by the write scanner 305.

As a result, in the pixel circuit 301A, as shown in FIG. 31C, the TFT313 is held in the off state and the TFT 312 and TFT 314 are turned on.Due to this, the input signal (Vin) propagated to the data line DTL301by the horizontal selector 303 is written into the capacitor C311 as thepixel capacitor Cs.

When writing this signal line voltage, it is important that the TFT 314be turned on. If there were no TFT 314, if the TFT 312 were turned onand the video signal were written in the pixel capacor Cs, couplingwould enter the source potential Vs of the TFT 311. As opposed to this,if turning on the TFT 314 connecting the node ND311 to the constantvoltage source 307, it will be connected to the low impedance line, sothe voltage of the line would be written into the source potential ofthe TFT 311.

At this time, if making the potential of the line Vo, the sourcepotential of the TFT 311 as the drive transistor becomes Vo, so apotential equal to (Vin−Vo) is held with respect to the voltage Vin ofthe input signal at the pixel capacitor Cs.

After this, in the non-emitting period of the EL light emitting element315, as shown in FIGS. 32A to 32F, the drive signals ds[301], ds[302], .. . to the drive lines DSL301, DSL302, . . . are held at the low levelby the drive scanner 306, the scanning signals ws[311], ws[312], . . .to the scanning lines WSL311, WSL312, . . . are held at the high levelby the write scanner 305, and the scanning signals ws[301], ws[302], . .. to the scanning lines WSL301, WSL302, . . . are selectively set to thelow level by the write scanner 304.

As a result, in the pixel circuit 301A, as shown in FIG. 31D, the TFT312 is turned off and the write operation of the input signal to thecapacitor C311 as the pixel capacitor ends.

At this time, the source potential of the TFT 311 has to hold the lowimpedance, so the TFT 314 is left on.

After this, as shown in FIGS. 32A to 32F, while the scanning signalsws[301], ws[302], . . . to the scanning lines WSL301, WSL302, . . . areheld at the low level by the write scanner 304, scanning signalsws[311], ws[312], . . . to the scanning lines WSL311, WSL312, . . . areset to the low level by the write scanner 305, then the drive signalsds[301], ds[302], . . . to the drive lines DSL301, DSL302, . . . areselectively set to the high level by the drive scanner 306.

As a result, in the pixel circuit 301, as shown in FIG. 31E, the TFT 314is turned off and the TFT 313 becomes on.

By turning the TFT 313 on, current flows to the EL light emittingelement 315 and the source potential of the TFT 311 falls. The sourcepotential of the TFT 311 as the drive transistor fluctuates, but despitethis, since there is a capacity between the gate and source of the TFT311, the gate-source voltage of the TFT 311 is constantly held at(Vin−Vcc).

Here, the TFT 313 drives in the non-saturated region, so this is viewedas a simple resistance value. Accordingly, the gate-source voltage ofthe TFT 311 is (Vin−Vo) minus the value of the voltage drop due to theTFT 313. That is, the current flowing through the TFT 311 can be said tobe determined by the Vin.

In this way, by turning the TFT 314 on during a signal write period tomake the source of the TFT 311 low in impedance, it is possible to makethe source side of the TFT 311 of the pixel capacitor a fixed potentialat all times, there is no need to consider deterioration of imagequality due to coupling at the time of a signal line write operation,and it is possible to write the signal line voltage in a short time.Further, it is possible to increase the pixel capacity to take measuresagainst leak characteristics.

At this time, the TFT 311 as the drive transistor constituted by isdriven in the saturated region, so the current Ids flowing through theTFT 311 becomes the value shown in the above equation 1. This is thegate-source voltage Vgs of the drive transistor, that is, (Vin−Vcc).

That is, the current flowing through the TFT 311 can be said to bedetermined by the Vin.

Due to the above, even if the EL light emitting element 315 deterioratesin its I-V characteristic along with the increase in the emittingperiod, in the pixel circuit 201A of the fifth embodiment, the potentialof the node ND311 falls while the potential between the gate and sourceof the TFT 311 as the drive transistor is held constant, so the currentflowing through the TFT 311 does not change.

Accordingly, the current flowing through the EL light emitting element315 also does not change. Even if the I-V characteristic of the EL lightemitting element 315 deteriorates, the current corresponding to theinput voltage Vin constantly flows and therefore the past problem can besolved.

Note that the potential of the line connected to the TFT 314 (constantvoltage source) is not limited, but as shown in FIG. 33, if making thepotential the same as Vcc, slashing the number of signal lines becomespossible. Due to this, the layout of the panel lines and pixel partsbecomes easy. Further, the number of pads for panel input becomespossible.

On the other hand, the gate-source voltage Vgs of the TFT 311 as thedrive transistor, as explained above, is determined by Vin−Vo.Accordingly, for example as shown in

FIG. 34, if setting Vo to a low potential such as the ground potentialGND, the input signal voltage Vin can be prepared by the low potentialnear the GND level and boosting of the signal of the nearby ICs is notrequired. Further, it is possible to reduce the on voltage of the TFT313 as the switching transistor and possible to eliminate the burden onthe external ICs in design.

Further, in FIG. 30, the potential of the cathode electrode of the lightemitting element 315 is made the ground potential GND, but this may bemade any other potential as well. Rather, making this the negative powersource enables the potential of the Vcc to be lowered and enables thepotential of the input signal voltage to be lowered. Due to this, designwithout burdening the external IC becomes possible.

Further, as shown in FIG. 35, the transistors of the pixel circuits neednot be n-channel transistors. p-channel TFTs 321 to 324 may also be usedto form each pixel circuit. In this case, the power source is connectedto the anode side of the EL light emitting element 325, while the TFT321 as the drive transistor is connected to the cathode side.

Further, the TFT 312, TFT 313, and TFT 314 as the switching transistorsmay also be transistors of different polarities from the TFT 311 as thedrive transistor.

According to the fifth embodiment, source-follower output with nodeterioration in luminance even with a change in the I-V characteristicof an EL element along with elapse becomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of anEL light emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, a reduction of the cost of TFTboards becomes possible.

Further, according to the fifth embodiment, it is possible to write thesignal line voltage in a short time even with for example a black signaland possible to obtain an image quality with a high uniformity.Simultaneously, it is possible to increase the signal line capacity andsuppress leakage characteristics.

Further, it is possible to slash the number of GND lines at the TFT sideand layout of the surrounding lines and layout of the pixels becomeeasier.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board, and possible to improve the yield.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board so as to lay the Vcc lines at a low resistance, andpossible to obtain an image quality of a high uniformity.

Still further, it is possible to make the input signal voltage near theGND and possible to lighten the load on the external drive system.

<Sixth Embodiment>

FIG. 36 is a block diagram of the configuration of an organic EL displaydevice employing pixel circuits according to a sixth embodiment.

FIG. 37 is a circuit diagram of the concrete configuration of a pixelcircuit according to the sixth embodiment in the organic EL displaydevice of FIG. 36.

This display device 400 has, as shown in FIG. 36 and FIG. 37, a pixelarray portion 402 having pixel circuits (PXLC) 401 arranged in an m×nmatrix, a horizontal selector (HSEL) 403, a write scanner (WSCN) 404, afirst drive scanner (DSCN1) 405, a second drive scanner (DSCN2) 406, athird drive scanner (DSCN3) 407, data lines DTL401 to DTL40 n selectedby the horizontal selector 403 and supplied with a data signal inaccordance with the luminance information, scanning lines WSL401 toWSL40 m selectively driven by the write scanner 404, drive lines DSL401to DSL40 m selectively driven by the first drive scanner 405, drivelines DSL411 to DSL41 m selectively driven by the second drive scanner406, and drive lines DSL421 to DSL42 m selectively driven by the thirddrive scanner 407.

Note that while the pixel circuits 401 are arranged in an m×n matrix inthe pixel array portion 402, FIG. 36 shows an example wherein the pixelcircuits are arranged in a 2 (=m)×3 (=n) matrix for the simplificationof the drawing.

Further, in FIG. 37, the concrete configuration of one pixel circuit isshown for simplification of the drawing.

The pixel circuit 401 according to the sixth embodiment has, as shown inFIG. 37, n-channel TFT 411 to TFT 415, a capacitor C411, a lightemitting element 416 made of an organic EL element (OLED), and nodesND411 and ND412.

Further, in FIG. 37, DTL401 indicates a data line, WSL401 indicates ascanning line, and DSL401, DSL411, and DSL421 indicate drive lines.

Among these components, TFT 411 configures the field effect transistoraccording to the present invention, TFT 412 configures the first switch,TFT 413 configures the second switch, TFT 414 configures the thirdswitch, TFT 415 configures the fourth switch, and the capacitor C411configures the pixel capacitance element according to the presentinvention.

Further, the scanning line WSL401 corresponds to the first control lineaccording to the present invention, the drive line DSL401 corresponds tothe second control line, the drive line DSL411 corresponds to the thirdcontrol line, and the drive line DSL421 corresponds to the fourthcontrol line.

Further, the supply line (power source potential) of the power sourcevoltage Vcc corresponds to the first reference potential, while theground potential GND corresponds to the second reference potential.

In each pixel circuit 401, a source and a drain of the TFT 414 areconnected between a source of the TFT 411 and the node ND411, a sourceand a drain of the TFT 413 are connected between the node ND411 and ananode of the light emitting element 416, a drain of the TFT 411 isconnected to the power source potential Vcc, and a cathode of the lightemitting element 416 is connected to the ground potential GND. That is,the TFT 411 as the drive transistor, the TFT 414 and TFT 413 as theswitching transistors, and the light emitting element 416 are connectedin series between the power source potential Vcc and the groundpotential GND.

A gate of the TFT 411 is connected to the node ND412. Further, thecapacitor C411 as a pixel capacitor Cs is connected between the gate andsource of the TFT 411. A first electrode of the capacitor C411 isconnected to the node ND411, while a second electrode is connected tothe node ND412.

A gate of the TFT 413 is connected to the drive line DSL401. Further, agate of the TFT 414 is connected to the drive line DSL411. Further, asource and a drain of the TFT 412 as the first switch are connectedbetween the data line DTL401 and the node ND411 (connection point withfirst electrode of capacitor C411). Further, a gate of the TFT 412 isconnected to the scanning line WSL401.

Further, a source and a drain of the TFT 415 are connected between thenode ND412 and the power source potential Vcc. A gate of the TFT 415 isconnected to the drive line DSL421.

In this way, the pixel circuit 401 according to the present embodimentis configured with the source of the TFT 411 as the drive transistor andthe anode of the light emitting element 416 connected by the TFT 414 andTFT 413 as the switching transistors, a capacitor C411 connected betweenthe gate of the TFT 411 and the source side node ND411, and the gate ofthe TFT 411 (node ND412) connected through the TFT 415 to the powersource potential Vcc (fixed voltage line).

Next, the operation of the above configuration will be explainedfocusing on the operation of a pixel circuit with reference to FIGS. 38Ato 38F, FIG. 39, and FIGS. 40A to 40H.

FIG. 40A shows a scanning signal ws[401] applied to the first rowscanning line WSL401 of the pixel array, FIG. 40B shows a scanningsignal ws[402] applied to the second row scanning line WSL402 of thepixel array, FIG. 40C shows drive signals ds[401] and ds[411] applied tothe first row drive lines DSL401 and DSL411 of the pixel array, FIG. 40Dshows drive signals ds[402] and d[412] applied to the second row drivelines DSL402 and DSL412 of the pixel array, FIG. 40E shows a drivesignal ds[421] applied to the first row drive line DSL421 of the pixelarray, FIG. 40F shows a drive signal ds[422] applied to the second rowdrive line DSL421 of the pixel array, FIG. 40G shows a gate potential Vgof the TFT 411, that is, the potential VND412 of the node ND412, andFIG. 40H shows an anode side potential of the TFT 411, that is, thepotential VND411 of the node ND411.

Note that there is no problem no matter which of the TFT 413 and TFT 414turns on or off, so as shown in FIG. 40C and FIG. 40D, the drive signalsDS[401] and ds[411] and the drive signals ds[402] and ds[412] applied tothe drive lines DSL401 and DSL411 and the drive lines DSL402 and DSL412are made the same timing.

First, at the ordinary emitting state of the EL light emitting element416, as shown in FIGS. 40A to 40F, the scanning signals ws[401],ws[402], . . . to the scanning lines WSL401, WSL402, . . . areselectively set to the low level by the write scanner 404, the drivesignals ds[401], ds[402], . . . to the drive lines DSL401, DSL402, . . .are selectively set to the high level by the drive scanner 405, thedrive signals ds[411], ds[412], . . . to the drive lines DSL411, DSL412,. . . are selectively set to the high level by the drive scanner 406,and the drive signals ds[421], ds[422], . . . to the drive lines DSL421,DSL422, . . . are selectively set to the low level by the drive scanner407.

As a result, in the pixel circuit 401, as shown in FIG. 38A, the TFT 414and TFT 413 are held in the on state and the TFT 412 and TFT 415 is heldin the off state.

First, at the ordinary non-emitting state of the EL light emittingelement 416, as shown in FIGS. 40A to 40F, the scanning signals ws[401],ws[402], . . . to the scanning lines WSL401, WSL402, . . . are held atthe low level by the write scanner 404, the drive signals ds[421],ds[422], . . . to the drive lines DSL421, DSL422, . . . are held at thelow level by the drive scanner 407, the drive signals ds[401], ds[402],. . . to the drive lines DSL401, DSL402, . . . are selectively set tothe low level by the drive scanner 405, and the drive signals ds[411],ds[412], . . . to the drive lines DSL411, DSL412, . . . are selectivelyset to the low level by the drive scanner 406.

As a result, in the pixel circuit 401, as shown in FIG. 38B, the TFT 412and TFT 415 are held in the off state and the TFTs 413 and 414 areturned off.

At this time, the potential held at the EL light emitting element 416falls since the source of supply disappears. The EL light emittingelement 416 stops emitting light. The potential falls to the thresholdvoltage Vth of the EL light emitting element 416. However, since offcurrent also flows to the EL light emitting element 416, if thenon-emitting period continues, the potential will fall to GND.

On the other hand, the TFT 411 as the drive transistor is held in the onstate since the gate potential is high. The source potential of the TFT411 is boosted to the power source voltage Vcc. This boosting isperformed in a short period. After boosting to the Vcc, no current issupplied to the TFT 411.

That is, in the pixel circuit 401 of the sixth embodiment, it ispossible to operate without the supply of current in the pixel circuitduring the non-emitting period and therefore possible to suppress thepower consumption of the panel.

In this state, next, as shown in FIGS. 40A to 40F, the drive signalsds[401], ds[402], . . . to the drive lines DSL401, DSL402, . . . areheld at the low level by the drive scanner 405, the drive signalsds[411], ds[412], . . . to the drive lines DSL411, DSL412, . . . areheld at the low level by the drive scanner 406, and in that state thedrive signals ds[421], ds[422], . . . to the drive lines DSL421, DSL422,. . . are set to the high level by the drive scanner 407, then thescanning signals ws[401], ws[402], . . . to the scanning lines WSL401,WSL402, . . . are selectively set to the high level by the write scanner404.

As a result, in the pixel circuit 401, as shown in FIG. 38C, the TFT 413and TFT 414 are held in the off state and the TFT 412 and TFT 415 areturned on. Due to this, the input signal propagated to the data lineDTL401 by the horizontal selector 403 is written into the capacitor C411as the pixel capacitor Cs.

At this time, the capacitor C411 as the pixel capacitor Cs holds apotential equal to the difference (Vcc−Vin) between the power sourcevoltage Vcc and the input voltage Vin.

After this, in the non-emitting period of the EL light emitting element416, as shown in FIGS. 40A to 40F, the drive signals ds[401], ds[402], .. . to the drive lines DSL401, DSL402, . . . are held at the low levelby the drive scanner 405, the drive signals ds[411], ds[412], . . . tothe drive lines DSL411, DSL412, . . . are held at the low level by thedrive scanner 406, and in that state the drive signals ds[421], ds[422],. . . to the drive lines DSL421, DSL422, . . . are selectively set tothe low level by the drive scanner 407, then the scanning signalsws[401], ws[402], . . . to the scanning lines WSL401, WSL402, . . . areselectively set to the low level by the write scanner 404.

As a result, in the pixel circuit 401, as shown in FIG. 38D, the TFT 415and TFT 412 turn off and the writing of the input signal to thecapacitor C411 as the pixel capacitor ends.

At this time, the capacitor C411 holds a potential equal to thedifference (Vcc−Vin) between the power source voltage Vcc and the inputvoltage Vin regardless of the potential of the capacitor end.

After this, as shown in FIGS. 40A to 40F, the drive signals ds[401],ds[402], . . . to the drive lines DSL401,

DSL402, . . . are held at the low level by the drive scanner 405, thedrive signals ds[421], ds[422], . . . to the drive lines DSL421, DSL422,. . . are held at the low level by the drive scanner 407, the scanningsignals ws[401], ws[402], . . . to the scanning lines WSL401, WSL402, .. . are held at the low level by the write scanner 404, and in thatstate the drive signals ds[411], ds[412], . . . to the drive linesDSL411, DSL412, . . . are selectively set to the high level by the drivescanner 406.

As a result, in the pixel circuit 401, as shown in FIG. 38E, the TFT414turns on. By the TFT 414 turning on, the gate-source potential of thedrive transistor TFT411 becomes the potential difference (Vcc−Vin)charged into the capacitor C411 as the pixel capacitor. Further, asshown in FIG. 40H, regardless of the value of the source potential ofthe TFT 411, the potential difference is held and the source potentialof the drive transistor 411 rises to Vcc.

Further, as shown in FIGS. 40A to 40F, the drive signals ds[421],ds[422], . . . to the drive lines DSL421, DSL422, . . . are held at thelow level by the drive scanner 407, the scanning signals ws[401],ws[402], . . . to the scanning lines WSL401, WSL402, . . . are held atthe low level by the write scanner 404, the drive signals ds[411],ds[412], . . . to the drive lines DSL411, DSL412, . . . are held at thehigh level by the drive scanner 406, and in that state the drive signalsds[401], ds[402], . . . to the drive lines DSL401, DSL402, . . . areselectively held at the high level by the drive scanner 405.

As a result, at the pixel circuit 401, as shown in FIG. 38F, TFT 413turns on.

By turning the TFT 413 on, the source potential of the TFT 411 falls. Inthis way, despite the fact that the source potential of the TFT 411 asthe drive transistor fluctuates, since there is a capacitance betweenthe gate of the TFT 411 and the anode of the EL light emitting element416, the gate-source potential of the TFT 411 is constantly held at(Vcc−Vin).

At this time, the TFT 411 as the drive transistor is driven in thesaturated region, so the current value Ids flowing to the TFT 411becomes the value shown in the above-mentioned equation 1. This isdetermined by the gate-source voltage Vgs of the drive transistor TFT411.

This current also flows to the EL light emitting element 416. The ELlight emitting element 416 emits light by a luminance proportional tothe current value.

The equivalent circuit of the EL light emitting element can be describedby transistors as shown in FIG. 39, so in FIG. 39, the potential of thenode ND411 stops after rising to the gate potential at which the currentIds flows to the light emitting element 416. Along with the change ofthis potential, the potential of the node ND412 also changes. If thefinal potential of the node ND411 is Vx, the potential of the node ND412is described as (Vx+Vcc−Vin) and the gate-source potential of the TFT411 as the drive transistor is held at (Vx+Vcc).

Due to the above, even if the EL light emitting element 416 deterioratesin I-V characteristic along with the increase in the emitting time, inthe pixel circuit 401 of the sixth embodiment, the potential of the nodeND411 drops while the gate-source potential of the TFT 411 as the drivetransistor is held constant, so the current flowing through the TFT 411does not change.

Accordingly, the current flowing through the EL light emitting element416 also does not change. Even if the I-V characteristic of the EL lightemitting element 416 deteriorates, a current corresponding to thegate-source potential (Vcc−Vin) constantly flows. Therefore, the pastproblem relating to deterioration along with elapse of the EL can besolved.

Further, in the circuit of the present invention, since the fixedpotential is only the power source Vcc in the pixel, no GND line whichhas to be laid thick is necessary. Due to this, it is possible to reducethe pixel area. Further, in the non-emitting period, the TFTs 413 and414 are off and no current is run through the circuit. That is, by notrunning current through the circuit during the non-emitting period, itis possible to reduce the power consumption.

As explained above, according to the sixth embodiment, thesource-follower output with no deterioration in luminance even with achange in the I-V characteristic of an EL element along with elapsebecomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of alight emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, a reduction of the cost of TFTboards becomes possible.

Further, in the present invention, it is possible to use the pixel powersource for the fixed potential, so it is possible to reduce the pixelarea and possible to expect higher definition of the panel.

Still further, by not running a current through the circuit while the ELlight emitting element is not emitting light, the power consumption canbe reduced.

As explained above, according to the present invention, source-followeroutput with no deterioration in luminance even with a change in the I-Vcharacteristic of an EL element along with elapse becomes possible.

A source-follower circuit of n-channel transistors becomes possible, soit is possible to use an n-channel transistor as a drive element of alight emitting element while using current anode-cathode electrodes.

Further, it is possible to configure transistors of a pixel circuit byonly n-channel transistors and possible to use the a-Si process in thefabrication of the TFTs. Due to this, a reduction of the cost of TFTboards becomes possible.

Further, it is possible to write the signal line voltage in a short timeeven with for example a black signal and possible to obtain an imagequality with a high uniformity. Simultaneously, it is possible toincrease the signal line capacity and suppress leakage characteristics.

Further, it is possible to slash the number of GND lines at the TFT sideand layout of the surrounding lines and layout of the pixels becomeeasier.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board, and possible to improve the yield.

Further, it is possible to slash the number of GND lines at the TFTside, possible to eliminate the overlap of the GND lines and Vcc linesat the TFT board so as to lay the Vcc lines at a low resistance, andpossible to obtain an image quality of a high uniformity.

Further, in the present invention, it is possible to use the pixel powersource for the fixed potential, so it is possible to reduce the pixelarea and possible to look forward to higher definition of the panel.

Still further, by not running a current through the circuit while the ELlight emitting element is not emitting light, the power consumption canbe reduced.

Still further, it is possible to make the input signal voltage near theGND and possible to lighten the load on the external drive system.

INDUSTRIAL APPLICABILITY

According to the pixel circuit, display device, and method of driving apixel circuit of the present invention, source-follower output with nodeterioration in luminance even with a change in the I-V characteristicof an EL element along with elapse becomes possible and asource-follower circuit of n-channel transistors becomes possible, so itis possible to use an n-channel transistor as a drive element of an ELelement while using current anode-cathode electrodes, therefore theinvention can be applied even to a large-sized and high definitionactive matrix type display.

LIST OF REFERENCES

100. . . display device

101 . . . pixel circuit (PXLC)

102 . . . pixel array portion

103 . . . horizontal selector (HSEL)

104 . . . write scanner (WSCN)

105 . . . drive scanner (DSCN)

DTL101 to DTL10 n . . . data line

WSL101 to WSL10 m . . . scanning line

DSL101 to DSL10 m . . . drive line

111 to 113 . . . TFT

114 . . . light emitting element

ND111, ND112 . . . node

200, 200A . . . display device

201, 201A . . . pixel circuit (PXLC)

202, 202A . . . pixel array portion

203 . . . horizontal selector (HSEL)

204 . . . write scanner (WSCN)

205 . . . drive scanner (DSCN)

DTL201 to DTL210 n . . . data line

WSL201 to WSL20 m . . . scanning line

DSL201 to DSL20 m . . . drive line

211 to 213 . . . TFT

214 . . . light emitting element

ND211, ND211A, ND212 . . . node

300, 300A . . . display device

301, 301A . . . pixel circuit (PXLC)

302, 302A . . . pixel array portion

303 . . . horizontal selector (HSEL)

304, 305 . . . write scanner (WSCN)

306 . . . drive scanner (DSCN)

DTL301 to DTL30 n . . . data line

WSL301 to WSL30 m, WSL311 to WSL31 m . . . scanning line

DSL301 to DSL30 m . . . drive line

311 to 314 . . . TFT

ND311, ND311A, ND312 . . . node

400 . . . display device, 401 . . . pixel circuit (PXLC)

402 . . . pixel array portion

403 . . . horizontal selector (HSEL)

404 . . . write scanner (WSCN)

405 to 407 . . . drive scanner (DSCN)

DTL401 to DTL40 n . . . data line

WSL401 to WSL40 m, DSL401 to DSL40 m, DSL411 to DSL41 m, DSL421 to DSL42m . . . drive line

411 to 415 . . . TFT

416 . . . light emitting element

1. A display device comprising: a plurality of pixel circuits fordriving electro-optic elements; scanner circuitry configured to drivethe pixel circuits; a first control line and a second control line, eachconnected to the scanner circuitry; and first and second referencepotential lines, wherein at least one of the plurality of pixel circuitsincludes: a data line through which a data signal in accordance withluminance information is supplied, an n-type drive transistor includinga first terminal, a second terminal and a control terminal, the drivetransistor being configured to form a current supply line from the saidfirst reference potential line to said second reference potential line,via the first terminal, the second terminal and one of the electro-opticelements, a pixel capacitor connected between said control terminal andsaid second terminal, wherein the n-type drive transistor is configuredto control a current flowing through said current supply line inaccordance with a voltage stored in the pixel capacitor, an n-type firstthin film transistor (TFT) connected between said data line and thecontrol terminal and controlled by said first control line, an n-typesecond TFT connected to the second terminal so as to set a potential ofthe second terminal to a predetermined potential while saidelectro-optic element is not emitting light, the second TFT beingcontrolled by at least the second control line, the second control linebeing connected only to the second TFT within said at least one of thepixel circuits, and the second TFT being configured to be, within onescanning period, (i) turned on before the first TFT is turned on, and(ii) turned off after the first TFT is turned on, and the secondterminal is connected to an anode electrode of said one of theelectro-optic elements, wherein the n-type first TFT, the n-type secondTFT and the n-type third TFT are formed by an amorphous silicon process.